In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 858 ( 2016-5), p. 119-124
Abstract:
This paper reports on recent advances in 4H-SiC epitaxial growth toward high-throughput production of high-quality and uniform 150 mm-diameter 4H-SiC epilayers by enhancing of growth rates, improving uniformity and reducing defect densities. A vertical single-wafer type SiC epitaxial reactor is employed and high-speed wafer rotation is confirmed as effective, not only for enhancing growth rates without increasing the source gas supply but also improving thickness and doping uniformities. The current levels of reducing particle-induced defects, in-grown stacking faults, basal plane dislocations and the Z 1/2 center (carbon vacancies) are reviewed.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.858
DOI:
10.4028/www.scientific.net/MSF.858.119
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2016
detail.hit.zdb_id:
2047372-2
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