In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 527-529 ( 2006-10-15), p. 1347-1350
Abstract:
The charge generated in 6H-SiC n+p diodes by oxygen (O) ion irradiation at energies
between 6 and 15 MeV was evaluated using the Transient Ion Beam Induced Current (TIBIC). The signal peak of the transient current increases, and the fall-time decreases with increasing applied
reverse bias. The value of collected charge increases with increasing applied reverse bias, and the saturation of the collected charge was observed in high reverse bias regions (e.g. above 70 V in the
case of 12MeV O-irradiation). The charge generated in the deeper region than the depletion layer is collected due to the "funneling effect". Almost all charge generated in n+p SiC diodes by O-irradiation
between 6 and 15 MeV is collected when the length of the depletion layer becomes longer than the projection range of ions.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.527-529
DOI:
10.4028/www.scientific.net/MSF
DOI:
10.4028/www.scientific.net/MSF.527-529.1347
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2006
detail.hit.zdb_id:
2047372-2
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