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  • Trans Tech Publications, Ltd.  (2)
  • 1
    Online Resource
    Online Resource
    A Novel Micromechanical Resonator Using Two-Dimensional Phononic Crystal Slab
    Trans Tech Publications, Ltd. ; 2011
    In:  Advanced Materials Research Vol. 254 ( 2011-5), p. 195-198
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 254 ( 2011-5), p. 195-198
    Abstract: Two-dimensional (2-D) Silicon phononic crystal (PnC) slab of a square array of cylindrical air holes in a 10μm thick free-standing silicon plate with line defects is characterized as a cavity-mode PnC resonator. Piezoelectric aluminum nitride (AlN) film is deployed as the inter-digital transducers (IDT) to transmit and detect acoustic waves, thus making the whole microfabrication process CMOS-compatible. Both the band structure of the PnC and the transmission spectrum of the proposed PnC resonator are analyzed and optimized using finite element method (FEM). The measured quality factor (Q factor) of the microfabricated PnC resonator is over 1,000 at its resonant frequency of 152.46MHz. The proposed PnC resonator shows promising acoustic resonance characteristics for RF communications and sensing applications.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.254
    DOI: 10.4028/www.scientific.net/AMR.254.195
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2011
    detail.hit.zdb_id: 2265002-7
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  • 2
    Online Resource
    Online Resource
    Multi-Layer High-K Gate Stack Materials for Low D〈sub〉it〈/sub〉 4H-SiC Based MOSFETs
    Trans Tech Publications, Ltd. ; 2022
    In:  Materials Science Forum Vol. 1062 ( 2022-05-31), p. 528-532
    Details
    In: Materials Science Forum, Trans Tech Publications, Ltd., Vol. 1062 ( 2022-05-31), p. 528-532
    Abstract: Metal-oxide-semiconductor capacitors with single and multi-layer high-K gate dielectrics on Si (0001) face of n-type 4H-SiC substrates have been investigated. Multi-layered nanolaminated gate-stack comprises alternating ultrathin (6nm) Al 2 O 3 and HfO 2 . A 5nm thick interfacial silicon oxynitride is deposited prior to laminated films to investigate interface trap properties and tuning of flat band voltage. Total thickness of gate-stack films including interfacial layer is 55nm. The thermal stability of multi-layered nanolaminated film is investigated using XTEM. Localized crystallization of HfO 2 is visible after RTA at 900°C while Al 2 O 3 remains fully amorphous. Some of HfO 2 grains have extended into Al 2 O 3 layer but was not able to crossover. The measured accumulation capacitance of 55nm thick gate dielectric gives an effective dielectric constant value of 9.6 and an equivalent oxide thickness of 22nm from high-frequency capacitance-voltage measurements. A positive flat band voltage ( of 12.2V and 10.6V are observed from both single layer HfO 2 and Al 2 O 3 dielectrics, respectively due to presence of negatively charged oxygen interstitial defects generated during atomic layer deposition process. However, V FB shifted towards negative voltage-7.6V for multi-layered Al 2 O 3 /HfO 2 stacks probably associated with positive Al and Hf interstitials at interface of Al 2 O 3 /HfO 2. Ultrathin interfacial oxynitride films is effective to reduce D it to 3×10 11 /eVcm 2 and tuning of V FB . The breakdown field of stacked gate dielectric on 4H-SiC is 10.0 MV/cm.
    Type of Medium: Online Resource
    ISSN: 1662-9752
    URL: Issue
    URL: Article
    DOI: 10.4028/v-xsbd1h
    DOI: 10.4028/p-oajc69
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2022
    detail.hit.zdb_id: 2047372-2
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