GLORIA

GEOMAR Library Ocean Research Information Access

X

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
  • Trans Tech Publications, Ltd.  (389)
Materialart
Verlag/Herausgeber
  • Trans Tech Publications, Ltd.  (389)
Person/Organisation
Sprache
Erscheinungszeitraum
  • 1
    Online-Ressource
    Online-Ressource
    Application of Limit Equilibrium Method to Stability Analysis of Jinping I High Arch Dam Abutment on 3d Multi-Grid Method
    Trans Tech Publications, Ltd. ; 2013
    In:  Applied Mechanics and Materials Vol. 405-408 ( 2013-9), p. 499-506
    Details
    In: Applied Mechanics and Materials, Trans Tech Publications, Ltd., Vol. 405-408 ( 2013-9), p. 499-506
    Kurzfassung: Based on nonlinear finite element analysis, three-dimensional elastoplastic numerical simulation of Jinping I high arch dam is developed. By using the method of multiply mesh, the stress result of FEM is transferred to any sliding surface (flat or curved), and the safety factors of sliding blocks are computed. The elastic-plastic calculation results indicate that the stress and displacement distributions are basically symmetrical to the river valley. The minimal safety factor of the left abutment under the basic condition is 4.88(larger than 3.5), which appears in the 1740m elevation in the temperature drop condition. However, the minimal safety factor of the right abutment under the basic condition is 3.41(less than 3.5), appearing in the 1710m elevation in the temperature rise condition, which means the necessity of the reinforcement measures to the right abutment.
    Materialart: Online-Ressource
    ISSN: 1662-7482
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMM.405-408
    DOI: 10.4028/www.scientific.net/AMM.405-408.499
    Sprache: Unbekannt
    Verlag: Trans Tech Publications, Ltd.
    Publikationsdatum: 2013
    ZDB Id: 2251882-4
    Standort Signatur Einschränkungen Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Online-Ressource
  • 2
    Online-Ressource
    Online-Ressource
    Effect of Ge Incorporation on Hydrogenated Amorphous Silicon Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition
    Trans Tech Publications, Ltd. ; 2012
    In:  Advanced Materials Research Vol. 569 ( 2012-9), p. 27-30
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 569 ( 2012-9), p. 27-30
    Kurzfassung: Hydrogenated amorphous silicon germanium thin films (a-SiGe:H) were prepared via plasma enhanced chemical vapor deposition (PECVD). By adjusting the flow rate of GeH4, a-SiGe:H thin films with narrow bandgap (Eg) were fabricated with high Ge incorporation. It was found that although narrow Eg was obtained, high Ge incorporation resulted in a great reduction of the thin film photosensitivity. This degradation was attributed to the increase of polysilane-(SiH2)n, which indicated a loose and disordered microstructure, in the films by systematically investigating the optical, optoelectronic and microstructure properties of the prepared a-SiGe:H thin films via transmission, photo/dark conductivity, Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR) measurements. Such investigation provided a helpful guide for further preparing narrow Eg a-SiGe:H materials with good optoelectronic properties.
    Materialart: Online-Ressource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.569
    DOI: 10.4028/www.scientific.net/AMR.569.27
    Sprache: Unbekannt
    Verlag: Trans Tech Publications, Ltd.
    Publikationsdatum: 2012
    ZDB Id: 2265002-7
    Standort Signatur Einschränkungen Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Online-Ressource
  • 3
    Online-Ressource
    Online-Ressource
    Effect of Deposition Pressure on the Properties of Silicon Thin Films
    Trans Tech Publications, Ltd. ; 2013
    In:  Advanced Materials Research Vol. 834-836 ( 2013-10), p. 70-73
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 834-836 ( 2013-10), p. 70-73
    Kurzfassung: Hydrogenated silicon thin film was prepared by plasma enhanced chemical vapor deposition (PECVD). The effects of the deposition pressure on the growth rate, the photoelectronic and microstructure properties of the thin films were investigated via transmission, photo/dark conductivity, Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR) measurements. The results indicate that the increase of the deposition pressure increases the bandgap and the growth rate, while makes the photosensitivity get worse, decreasing from more than ~10 3 to ~10 2 . And at the same time, the crystalline volume fraction ( Xc ) in the film decreases from 70% to 61%, when the deposition pressure increases from 100 Pa to 500 Pa. The order degree of the microstructure was deteriorated with pressure increasing.
    Materialart: Online-Ressource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.834-836
    DOI: 10.4028/www.scientific.net/AMR.834-836.70
    Sprache: Unbekannt
    Verlag: Trans Tech Publications, Ltd.
    Publikationsdatum: 2013
    ZDB Id: 2265002-7
    Standort Signatur Einschränkungen Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Online-Ressource
  • 4
    Online-Ressource
    Online-Ressource
    Surface Passivation of Silicon Wafers by Iodine-Ethanol (I-E) for Minority Carrier Lifetime Measurements
    Trans Tech Publications, Ltd. ; 2013
    In:  Advanced Materials Research Vol. 652-654 ( 2013-1), p. 901-905
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 652-654 ( 2013-1), p. 901-905
    Kurzfassung: The effective minority carrier lifetime (τ eff ) depends upon the quality of surface passivation, which by means of the microwave photoconductance decays (μPCD) method. The effective minority carrier lifetime (τ eff ) cannot reveal the real bulk lifetime of minority carriers (τ b ) . We have applied iodine-ethanol (I-E) treatment to silicon surface at different molar concentrations and shown that the effective concentrations ranges was 0.08mol/L~0.16 mol/L, the maximum The effective minority carrier lifetime (τ eff ) of n-type monocrystalline and p-type monocrystalline was 973.71μs and 362.6μs, respectively. We also accurately evaluate the bulk lifetime of minority carriers by measured with different thickness of silicon substrate.
    Materialart: Online-Ressource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.652-654
    DOI: 10.4028/www.scientific.net/AMR.652-654.901
    Sprache: Unbekannt
    Verlag: Trans Tech Publications, Ltd.
    Publikationsdatum: 2013
    ZDB Id: 2265002-7
    Standort Signatur Einschränkungen Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Online-Ressource
  • 5
    Online-Ressource
    Online-Ressource
    Effect of Ultrasonic Wave on Latex Production and Quality of Rubber Tree
    Trans Tech Publications, Ltd. ; 2013
    In:  Applied Mechanics and Materials Vol. 419 ( 2013-10), p. 360-365
    Details
    In: Applied Mechanics and Materials, Trans Tech Publications, Ltd., Vol. 419 ( 2013-10), p. 360-365
    Kurzfassung: The effects of ultrasonic wave on tapping surface of ‘PR107’ rubber tree were studied. Daily production and cumulative production of latex were measured to estimate the effects of ultrasonic wave on latex production. The solid substance content, dry rubber content and mechanical stability of latex were determined to study the effects of ultrasonic wave on latex quality. Results showed that ultrasonic wave could increase both daily and cumulative production of latex and maintain latex basic quality. The daily production of latex was increased and appeared two peaks both in the ultrasound-treated rubber tree and the one with no treatment. The first peak appeared on the fifth day, and the latex production by ultrasound was 212.34 ml and the control was 141.75 ml. The second peak appeared with the production 266.59 ml on the seventeenth day by ultrasound, while the control appeared on the thirteenth day with production of 193.50 ml. The latex cumulative production of ultrasound-treated trees was 209.56 ml higher than that of control in one month. There was little change in solid substance content and dry rubber content between different ultrasonic time. The best mechanical stability of latex was obtained by ultrasound-treating the rubber tree for 4-6 min. it was proved that the ultrasound was helpful in improving the latex production and quality. The application of ultrasonic wave on rubber tree is novel, and its mechanism is worth further research.
    Materialart: Online-Ressource
    ISSN: 1662-7482
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMM.419
    DOI: 10.4028/www.scientific.net/AMM.419.360
    Sprache: Unbekannt
    Verlag: Trans Tech Publications, Ltd.
    Publikationsdatum: 2013
    ZDB Id: 2251882-4
    Standort Signatur Einschränkungen Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Online-Ressource
  • 6
    Online-Ressource
    Online-Ressource
    Preparation of Large Size Pyramidal Texture on N-Type Monocrystalline Silicon Using TMAH Solution for Heterojunction Solar Cells
    Trans Tech Publications, Ltd. ; 2012
    In:  Advanced Materials Research Vol. 476-478 ( 2012-2), p. 1815-1819
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 476-478 ( 2012-2), p. 1815-1819
    Kurzfassung: Pyramidal texture is one traditional method to realize antireflection for c-Si solar cells, due to its low cost and simplicity. As one high efficiency silicon solar cell, amorphous/crystalline silicon heterojunction (SHJ) solar cell has attracted much attention all over the world. The heterojunction interface with very low defects and interface states is critical to the SHJ solar cell performance. In order to obtain high quality interface passivation by depositing a very thin intrinsic amorphous silicon layer on the textured Si conformally, large size pyramidal texture with no metal ion contamination is required. In this work, we utilized tetra-methyl ammonium hydroxide (TMAH) instead of NaOH in the alkaline etching to prepare pyramidal texture on N-type monocrystalline silicon to avoid the possible Na+ contamination. By optimizing the etching conditions, uniform large size pyramidal texture with pyramid size of about 10 μm was fabricated successfully. Furthermore, excellent antireflection performance was demonstrated on such textured Si surface. The average reflectance was lower than 10% in the visible and near infrared spectrum range. Such pyramidally textured Si wafers will be very suitable for SHJ solar cells.
    Materialart: Online-Ressource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.476-478
    DOI: 10.4028/www.scientific.net/AMR.476-478.1815
    Sprache: Unbekannt
    Verlag: Trans Tech Publications, Ltd.
    Publikationsdatum: 2012
    ZDB Id: 2265002-7
    Standort Signatur Einschränkungen Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Online-Ressource
  • 7
    Online-Ressource
    Online-Ressource
    Effect of Deposition Power on the Structure Properties of Microcrystalline Silicon Thin Films
    Trans Tech Publications, Ltd. ; 2013
    In:  Applied Mechanics and Materials Vol. 442 ( 2013-10), p. 116-119
    Details
    In: Applied Mechanics and Materials, Trans Tech Publications, Ltd., Vol. 442 ( 2013-10), p. 116-119
    Kurzfassung: Microcrystalline silicon thin films prepared by plasma enhanced chemical vapor deposition (PECVD). Effects of deposition power on the microstructure properties of the thin films were investigated by Raman spectrometry, Fourier transform infrared absorption spectroscopy (FTIR) and atomic force microscopy (AFM). With increasing deposition power from 100 W to 900 W, the growth rate increased from 0.75Å/s to 2.96Å/s. The Raman spectrometry measurements showed that the peak of all films is nearby at 514 nm. The FTIR spectroscopic analysis exhibit that with power increasing the intensities of both the (Si-H) n stretching mode component at 2100cm -1 and wagging mode component at 620cm -1 increase. The surface morphology of the films using the AFM showed the surface roughness and voids of the films increase with deposition power increasing.
    Materialart: Online-Ressource
    ISSN: 1662-7482
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMM.442
    DOI: 10.4028/www.scientific.net/AMM.442.116
    Sprache: Unbekannt
    Verlag: Trans Tech Publications, Ltd.
    Publikationsdatum: 2013
    ZDB Id: 2251882-4
    Standort Signatur Einschränkungen Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Online-Ressource
  • 8
    Online-Ressource
    Online-Ressource
    Nanosteps Preparation Based on Focused Ion Beam Technique
    Trans Tech Publications, Ltd. ; 2017
    In:  Applied Mechanics and Materials Vol. 870 ( 2017-9), p. 114-119
    Details
    In: Applied Mechanics and Materials, Trans Tech Publications, Ltd., Vol. 870 ( 2017-9), p. 114-119
    Kurzfassung: In this paper, nanosteps were fabricated by a new method. This method used the energy of focus imaging of focused ion beam to peel the material surface for fabricating the nanosteps. By changing the number of focus imaging can get different deepness nanosingle-steps. Changing the magnification, the second-step can be fabricated on nanosingle-step. An atomic force microscopy was used to measure the 3D morphology of nanosteps. When the magnification was 25000, the deepness of nanosingle-step was 65.34±3.00 nm and the deepness of the first step of nanodual-step was 56.03 nm. When the magnification was 50000, the deepness of nanosingle-step was 142.28±3.54 nm and the deepness of the second step of nanodual-step was 178.68nm. This means that the redeposition made the deepness of the first step become bigger, that of the second step becomes smaller. Based on comparison and analysis, the relation of the depth, the magnification and the number of the focus imaging were obtained.
    Materialart: Online-Ressource
    ISSN: 1662-7482
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMM.870
    DOI: 10.4028/www.scientific.net/AMM.870.114
    Sprache: Unbekannt
    Verlag: Trans Tech Publications, Ltd.
    Publikationsdatum: 2017
    ZDB Id: 2251882-4
    Standort Signatur Einschränkungen Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Online-Ressource
  • 9
    Online-Ressource
    Online-Ressource
    Investigation of Texturing for Mono-Crystalline Silicon without IPA
    Trans Tech Publications, Ltd. ; 2013
    In:  Applied Mechanics and Materials Vol. 442 ( 2013-10), p. 129-133
    Details
    In: Applied Mechanics and Materials, Trans Tech Publications, Ltd., Vol. 442 ( 2013-10), p. 129-133
    Kurzfassung: Isopropyl alcohol (IPA) is widely used as an additive to enhance the alkaline texturing process of mono-crystalline silicon solar cells currently. However, due to its low boiling point and high volatilization, some negative effects are brought into large scale production especially in stability, cost and environment. In this paper, an IPA-free texturing process was studied by using other additive instead of IPA. The influences of concentration of KOH and additive on etching rate, surface morphology and weighted reflectance were investigated. It is found that the additive has an opposite effect on etching rate and pyramid size compared to KOH. The etching rate and average pyramid size decrease with the concentration of additive increased. The best weight reflectance of 10.8% and lowest average pyramid size of 1.1 um were obtained on mono-crystalline silicon surface by an optimized solution of 1.5 wt% KOH and 1.5 wt% additive at 80oC for 20 minutes. Finally, the effects of KOH and IPA-free additive on the texturing process were also discussed in detail.
    Materialart: Online-Ressource
    ISSN: 1662-7482
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMM.442
    DOI: 10.4028/www.scientific.net/AMM.442.129
    Sprache: Unbekannt
    Verlag: Trans Tech Publications, Ltd.
    Publikationsdatum: 2013
    ZDB Id: 2251882-4
    Standort Signatur Einschränkungen Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Online-Ressource
  • 10
    Online-Ressource
    Online-Ressource
    Optical Property of Pyramidal-Substrate with Nano Porous Layer
    Trans Tech Publications, Ltd. ; 2013
    In:  Advanced Materials Research Vol. 772 ( 2013-9), p. 331-336
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 772 ( 2013-9), p. 331-336
    Kurzfassung: Pyramidal surface is commonly used as an antireflection structure. The weighted reflectance averaged by the AM 1.5 G spectrum is about 14%. In the photovoltaic field, lowering the surface reflectivity is an important approach to improve the conversion efficiency. Black silicon surface with low reflectivity is benefit of solar cells. But conversion efficiency of black silicon solar cell is still low due to the severe surface recombination. In this paper, shallower black silicon layer was formed on the pyramidal surface. For the sample etched 1 min, the weighted reflectance is only 13.20%, and the pyramidal one is 14.10%. The layer would not deteriorate the material. Lifetime of the substrates after high temperature phosphorous diffusion is 13.35 μs higher than the pyramidal one. The mean sheet resistance is nearly the same between the pyramidal surface and the etched pyramidal surface.
    Materialart: Online-Ressource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.772
    DOI: 10.4028/www.scientific.net/AMR.772.331
    Sprache: Unbekannt
    Verlag: Trans Tech Publications, Ltd.
    Publikationsdatum: 2013
    ZDB Id: 2265002-7
    Standort Signatur Einschränkungen Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Online-Ressource
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...