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  • The Electrochemical Society  (4)
  • 1
    Online Resource
    Online Resource
    Smart Polymers for Future Damascene Applications: Combining Bottom-up and Levelling Capabilities
    The Electrochemical Society ; 2015
    In:  ECS Meeting Abstracts Vol. MA2015-01, No. 15 ( 2015-04-29), p. 1163-1163
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2015-01, No. 15 ( 2015-04-29), p. 1163-1163
    Abstract: Classical additive concepts for the metallization of trenches and vias (Damascene applications) make use of a combination of polymeric suppressors (polyaklylene glycols, PAGs) and their specific antagonists (SPS). Their interplay is intended to regulate the desired bottom-up fill process. Typically, a leveler additive is added to the plating bath as a third additive component which is meant to avoid undesired overplating after the successful superfill. In this contribution we discuss so-called hybrid polymers which comprise electrochemical characteristics of the PAG suppressors and classical leveler additives. Feature fill experiments demonstrate that bottom-up fill and leveling can indeed be achieved by using one single hybrid polymer component when combined with the SPS. Prototypical model additives showing these hybrid characteristics are polymerizates of epichlorohydrin and imidazole (Imep). Antagonistic Imep/SPS interactions required for the bottom-up fill are observed in particular at low (nominal) current densities whereas synergistic Imep/SPS interactions needed for leveling are dominant higher (nominal) current densities. Copper films electrodeposited in the presence of an intact Imep leveler ensemble are essentially contamination-free. To probe the contamination level depth profiling experiments with sub-nm depth resolution were carried using a new femto-second laser ablation set-up coupled with a reflectron TOF mass spectrometer. This approach allows a true quantification of the contaminants which actually accumulate at the grain boundaries of the electrodeposited copper films.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2015-01/15/1163
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2015
    detail.hit.zdb_id: 2438749-6
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  • 2
    Online Resource
    Online Resource
    Review—Laser Ablation Ionization Mass Spectrometry (LIMS) for Analysis of Electrodeposited Cu Interconnects
    The Electrochemical Society ; 2019
    In:  Journal of The Electrochemical Society Vol. 166, No. 1 ( 2019), p. D3190-D3199
    Details
    In: Journal of The Electrochemical Society, The Electrochemical Society, Vol. 166, No. 1 ( 2019), p. D3190-D3199
    Type of Medium: Online Resource
    ISSN: 0013-4651 , 1945-7111
    URL: Article
    DOI: 10.1149/2.0221901jes
    RVK:
    VA 4000
    Language: English
    Publisher: The Electrochemical Society
    Publication Date: 2019
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  • 3
    Online Resource
    Online Resource
    (Invited) Towards Spatially Resolved Chemical Analysis of Sn/Ag Solder Bumps By Means of Laser Ablation Ionization Mass Spectrometry (LIMS)
    The Electrochemical Society ; 2019
    In:  ECS Meeting Abstracts Vol. MA2019-01, No. 18 ( 2019-05-01), p. 1060-1060
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2019-01, No. 18 ( 2019-05-01), p. 1060-1060
    Abstract: Following the ban of Sn/Pb solders from the markets eutectic Sn/Ag alloy has become the industrially most relevant option in the field of microchip fabrication 1 . Sn/Ag solder bumps are mostly prepared by means of through-mask electrodeposition. Due to the inherently different electrochemical properties of Sn and Ag, their efficient co-deposition requires optimization of plating parameters as well as the use of numerous organic plating additives 2-5 , rendering the development of high-performance plating bath compositions a very demanding task. Major criteria for assessing the quality of a plating formulation are the fraction of Ag and the homogeneity of Ag distribution within the as-deposited solder alloy, as these characteristics are crucially relevant for homogeneous melting and defect-free recrystallization during the soldering process 1 . It is of urgent interest to microchip industry to minimize embedment of the plating additives into the solder material, as these might cause voids during soldering and may lead to a reduced lifetime of the devices under working conditions. Investigation of these aspects requires sophisticated and highly spatially resolved depth profiling methods providing both lateral and vertical information on the solder composition and possible organic residues. To date, well-established composition analysis techniques for solid materials are only partly able to provide such data. In this contribution, we present depth profiling by means of femtosecond laser ablation ionization mass spectrometry (fs-LIMS) using the LMS instrument 7, 8 as an approach to achieve these goals. For this purpose, we study fundamentals of fs-laser-matter interaction on Sn and Sn/Ag alloys with particular focus on the influence of different laser characteristics (IR and UV light, laser intensity) on ablation and reflow processes taking place on these materials. Furthermore, we compare different depth profiling approaches, i.e., spatially resolved one-dimensional depth profiling and two-dimensional raster matrices with different geometries. Moreover, we aim towards three-dimensionality with a sample-tailored raster approach that allows to investigate the electroplated deposit layer by layer or to even select specific regions of a given layer only. We demonstrate how this approach yields improved results especially in the analysis of laterally highly confined solder bump arrays. The thus obtained data allow for extraction of depth profiles of the major species Sn and Ag, as well as C, O, and S from the embedded additives within the alloy matrix. These are required to assess the homogeneity and the purity of Sn/Ag electroplated depositions from different bath formulations or under differential plating parameters. Correlation of different elemental profile data to each other might contribute to the evaluation of whether additive or electrolyte embedment takes place and thereby may crucially help to bring forward plating formulation development. M. Abtew and G. Selvaduray, Materials Science and Engineering: R: Reports , 2000, 27 , 95-141. J. Y. Kim, J. Yu, J. H. Lee and T. Y. Lee, Journal of Electronic Materials , 2004, 33 , 1459-1464. S. Joseph and G. J. Phatak, Surface and Coatings Technology , 2008, 202 , 3023-3028. A. Hrussanova and I. Krastev, Journal of Applied Electrochemistry , 2009, 39 , 989-994. C. Han, Q. Liu and D. G. Ivey, Materials Science and Engineering: B , 2009, 164 , 172-179. A. Cedeño López, V. Grimaudo, P. Moreno-García, A. Riedo, M. Tulej, R. Wiesendanger, P. Wurz and P. Broekmann, Journal of Analytical Atomic Spectrometry , 2018, 33 , 283-293. A. Riedo, M. Neuland, S. Meyer, M. Tulej and P. Wurz, Journal of Analytical Atomic Spectrometry , 2013, 28 , 1256-1269. A. Riedo, V. Grimaudo, P. Moreno-García, M. B. Neuland, M. Tulej, P. Broekmann and P. Wurz, CHIMIA International Journal for Chemistry , 2016, 70 , 268-273. Figure 1
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2019-01/18/1060
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2019
    detail.hit.zdb_id: 2438749-6
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  • 4
    Online Resource
    Online Resource
    Spatial Chemical Analysis of Electrodeposited Metal Films By Femtosecond Laser Ablation Ionization Mass Spectrometry
    The Electrochemical Society ; 2018
    In:  ECS Meeting Abstracts Vol. MA2018-01, No. 19 ( 2018-04-13), p. 1259-1259
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2018-01, No. 19 ( 2018-04-13), p. 1259-1259
    Abstract: In recent years, the development of three-dimensional large-scale integration (3D-LSI) has been accelerated to overcome the limitations of the classical 2D integration approach, which has begun to deviate from the ideal scaling trends 1 . Ever increasing complexity of these novel structures that assemble a great variety of materials with distinct physical properties pose new challenges for fabrication and subsequent composition analysis of microchips. In this context, metal electrodeposition plays a crucial role in the manufacturing of the interconnect networks inside the devices. Since these metallic interconnects are manufactured by an additive-assisted metal electrodeposition process, incorporation of the employed additives in the metallic matrices in trace amounts might heavily influence their performance and durability 2 . Herein we present case studies that analyze two key components of state-of-the-art integrated circuits (ICs), namely through-silicon-vias (TSV) 2 and lead-free solder interconnects 3 (Sn-Cu). In the former case, accurate targeting and chemical composition analysis of TSVs was addressed by means of three complementary techniques: femtosecond laser ablation ionization mass spectrometry (LIMS technique; τ ~ 190 fs, λ = 775 nm, laser crater diameter Ø ~ 15 µm) 4 , Auger electron spectroscopy and focused ion beam. Top-down laser ablation analysis of the TSVs allowed qualitative depth profiling that showed a decreasing trend of the C content with depth. This indicates preferential incorporation of organic impurities from the employed plating additives on the top level of the TSV feature. Quantitative C content analysis inside the copper lines was enabled by an alternative experimental approach, in which the chemical composition of the copper structures was analyzed over the feature cross-sections. In agreement with top-down profiling this approach revealed a 1.5-fold increased embedment of C in the upper part of the TSV with respect to the bottom section. Regarding the second case study, we focused on enabling quantitative depth profiling investigations of Sn-Cu bilayers as representative model system of the target Sn solder bumps deposited on Cu pillars. We report a dedicated study on the quantification of side-walls contributions in the course of fs-laser ablation mass spectrometry depth profiling experiments using the LIMS technique. We identified the prerequisites for quantitative depth profiling of multi-layer systems similar to these Sn/Cu solder bumps and compared different general approaches. Preliminary LIMS results on Sn/Cu solder bumps will be discussed. Overall, these investigations shed light on the spatial chemical distribution of contaminants in metal films that might enable further improvements of additive-assisted electrodeposition processes. 1 Motoyoshi, M. Through-Silicon Via (TSV). Proceedings of the IEEE 97 , 43-48, (2009). 2 Gambino, J. P., Adderly, S. A. & Knickerbocker, J. U. Microelectronic Engineering 135 , 73-106, (2015). 3 Bigas, M. & Cabruja, E. Microelectronics Journal 37 , 308-316, (2006). 4 Grimaudo, V. et al. Anal. Chem. 87 , 2037-2041, (2015).
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2018-01/19/1259
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2018
    detail.hit.zdb_id: 2438749-6
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