In:
ECS Transactions, The Electrochemical Society, Vol. 1, No. 30 ( 2006-07-07), p. 1-6
Abstract:
Strained-Si/SiGe substrate comprises a thermally less conductive SiGe layer, which deprives a good thermal dissipation pathway. This gives rise to a highly non- equilibrium laser process and can vary significantly to that in normal bulk silicon substrate. Our results show that the boron distribution in strained-Si/SiGe substrate is always deeper and more abrupt than that in bulk silicon substrate, signifying a substantial thermal confinement that leads to a greater melt extent and melting duration. It is found that a decrease of over 94% thermal transfer rate occurs in the strained-Si/SiGe substrate. Non-melt laser annealing, on the other hand, produces dopant profiles of negligible diffusion and improves activation in the strained-Si/SiGe substrates. No degradation in the strain in the strained-Si layer was induced after non- melt laser annealing. The study demonstrates that non-melt laser annealing in thermally less conductive semiconductor substrates is capable of enhancing dopant activation at low laser fluence.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2006
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