In:
ECS Transactions, The Electrochemical Society, Vol. 33, No. 5 ( 2010-10-01), p. 319-324
Abstract:
Amorphous HfInZnO (HIZO) - thin film transistor (TFT) with the bottom gate structure were fabricated to investigate the effect of light illumination on the transfer curves and stability characteristics under negative bias stress. The TFTs with passivation layers showed promising characteristics when measured in the dark, with a saturation mobility (µsat) of 9.0 cm2/Vs, a sub-threshold swing (SS) of 0.34 V/dec and an on/off ratio of ~108. However, when exposed to light of wavelengths below 500nm, the transfer curve changes remarkably, with an increase of SS and off-current (Ioff). The change in the transfer curves were also studied by examining them before and after negative bias-temperature-illumination stress. The increase of SS under light illumination can be due to the increase in the number of activated interfacial traps by photon energy.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2010
Permalink