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  • The Electrochemical Society  (25)
  • 1
    Online Resource
    Online Resource
    The Electrochemical Society ; 2016
    In:  ECS Meeting Abstracts Vol. MA2016-02, No. 50 ( 2016-09-01), p. 3777-3777
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2016-02, No. 50 ( 2016-09-01), p. 3777-3777
    Abstract: Recently, gas sensor has been studied because of increasing accidents caused by harmful and explosive gas, which is hard to detect olfactory system. Tin oxide is one of the most promising candidates for gas sensing materials owing to its many advantages, such as various gas detecting capability, good stability and high sensitivity. In gas sensor, the kinds of sensing materials as well as detecting layer structures are important. The sensing materials with high surface areas show high sensing performance, so nanowire structure with mechanical contact between nanowires has been widely used. However, electric signal of nanowire along mechanical contacts is not stable and the external vibration and fast gas flow generates the inaccurate signal. In this research, the low density tin oxide film with stable interconnection between nanoparticles was prepared using the physical vapor deposition by controlling the processing pressure, temperature and power. Macrostructure and interconnected structure between tin oxide nanoparticles were observed using scanning electron microscope (SEM) and transmission electron microscope (TEM) and crystal structure was analyzed by X-ray diffraction (XRD). Platinum and titanium electrodes were fabricated by lift-off process on the silicon substrate with the silicon nitride film of 300 nm, and then tin oxide with low density was deposited on it using shadow mask. The characteristics of the gas sensor were examined using carbon mono-oxide (CO) and ethanol (C 2 H 5 OH) changing concentration of gas, operating temperature and post heat-treatment temperature. In conclusion, porous nanostructure of tin oxide was composed of a lot of interconnected nanoparticles of about 10 nm and showed stable resistance in dry air. And post heat-treatment enhanced the stability in spite of inreasing the particle size. It could be suggested that the oxide films with lower density showed the superior sensitivity and the shorter response time than the oxide films with higher density. Figure 1
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2016
    detail.hit.zdb_id: 2438749-6
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  • 2
    Online Resource
    Online Resource
    The Electrochemical Society ; 2006
    In:  Journal of The Electrochemical Society Vol. 153, No. 12 ( 2006), p. D213-
    In: Journal of The Electrochemical Society, The Electrochemical Society, Vol. 153, No. 12 ( 2006), p. D213-
    Type of Medium: Online Resource
    ISSN: 0013-4651
    RVK:
    Language: English
    Publisher: The Electrochemical Society
    Publication Date: 2006
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  • 3
    Online Resource
    Online Resource
    The Electrochemical Society ; 2008
    In:  Electrochemical and Solid-State Letters Vol. 11, No. 11 ( 2008), p. H303-
    In: Electrochemical and Solid-State Letters, The Electrochemical Society, Vol. 11, No. 11 ( 2008), p. H303-
    Type of Medium: Online Resource
    ISSN: 1099-0062
    Language: English
    Publisher: The Electrochemical Society
    Publication Date: 2008
    detail.hit.zdb_id: 1483551-4
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  • 4
    Online Resource
    Online Resource
    The Electrochemical Society ; 2020
    In:  ECS Journal of Solid State Science and Technology Vol. 9, No. 3 ( 2020-03-13), p. 035005-
    In: ECS Journal of Solid State Science and Technology, The Electrochemical Society, Vol. 9, No. 3 ( 2020-03-13), p. 035005-
    Type of Medium: Online Resource
    ISSN: 2162-8777
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2020
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  • 5
    Online Resource
    Online Resource
    The Electrochemical Society ; 2021
    In:  ECS Journal of Solid State Science and Technology Vol. 10, No. 4 ( 2021-04-01), p. 045002-
    In: ECS Journal of Solid State Science and Technology, The Electrochemical Society, Vol. 10, No. 4 ( 2021-04-01), p. 045002-
    Abstract: We investigated the electrical and optical performance and reliability of 278 nm deep ultraviolet (DUV) AlGaN-based flip-chip light-emitting diodes (FCLEDs) fabricated with ITO/Al and reference Ni/Au contacts. The DUV FCLEDs with the Ni/Au and ITO/Al contacts yielded forward voltages of 6.52 and 6.65 V at 50 A cm −2 and light output of 6.36 and 10.06 mW at 50 A cm −2 , respectively. The ITO/Al-based FCLEDs produced higher Wall plug efficiency (WPE) (3.04% at 50 A cm −2 ) than the Ni/Au-based samples (1.96%). The ITO/Al-based FCLEDs revealed 55% higher WPE at 50 A cm −2 than the Ni/Au-based sample. For both of the samples, the output power decreased with increasing operation time at 100 A cm −2 . For example, after 2000 h, the Ni/Au and ITO/Al-based FCLEDs showed a reduction in the output power by 37% and 22%, respectively. Despite the good output characteristics, the ITO/Al contact-based FCLEDs exhibited higher forward bias voltages than the Ni/Au-based sample. Based on the energy dispersive X-ray spectroscopy (EDS) depth profiles, high-angle annular dark field (HAADF), and electron energy loss spectroscopy (EELS) results, reason for the increase in the forward voltage of ITO/Al-based FCLEDs is described and discussed.
    Type of Medium: Online Resource
    ISSN: 2162-8769 , 2162-8777
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2021
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  • 6
    Online Resource
    Online Resource
    The Electrochemical Society ; 2008
    In:  Electrochemical and Solid-State Letters Vol. 11, No. 3 ( 2008), p. H51-
    In: Electrochemical and Solid-State Letters, The Electrochemical Society, Vol. 11, No. 3 ( 2008), p. H51-
    Type of Medium: Online Resource
    ISSN: 1099-0062
    Language: English
    Publisher: The Electrochemical Society
    Publication Date: 2008
    detail.hit.zdb_id: 1483551-4
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  • 7
    Online Resource
    Online Resource
    The Electrochemical Society ; 2009
    In:  Journal of The Electrochemical Society Vol. 156, No. 8 ( 2009), p. J215-
    In: Journal of The Electrochemical Society, The Electrochemical Society, Vol. 156, No. 8 ( 2009), p. J215-
    Type of Medium: Online Resource
    ISSN: 0013-4651
    RVK:
    Language: English
    Publisher: The Electrochemical Society
    Publication Date: 2009
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  • 8
    Online Resource
    Online Resource
    The Electrochemical Society ; 2020
    In:  ECS Meeting Abstracts Vol. MA2020-01, No. 28 ( 2020-05-01), p. 2085-2085
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2020-01, No. 28 ( 2020-05-01), p. 2085-2085
    Abstract: Introduction and Motivation With the development of science and technology, the process of industrialization is getting faster and faster, and people's living standards have also increased. However, the emission of gases such as methane has led to the greenhouse effect, which is 25 times [1] that of CO 2 with equal molar volume. In addition, methane, as one of the main components of natural gas, is also flammable and explosive. If the gas concentration in the underground operation is too high ( 〉 5% [2]), it will be prone to explosion, resulting in casualties and property losses. Therefore, the development of high-performance methane gas sensors is particularly important. In the past few decades, sensors prepared using metal oxide semiconductors (MOS) have been widely used in various application with the advantages of low-cost, easy fabrication and integration, good safety and long service life. Up to now, many kinds of MOS have been reported to detect methane, TiO 2 [3], SnO 2 [4], VO 2 [5] and so on. However, there is little literature on the detection of methane by using indium oxide. Indium oxide (In 2 O 3 ) has been extensively applied to the field of gas sensor as a gas sensing material due to its good catalytic activity and high electric conductivity. In this paper, In 2 O 3 NPs were prepared by co-precipitation method, and their morphology, nanostructure and sensing properties to methane gas were investigated. Experiment Indium oxide (In 2 O 3 ) NPs were prepared by the co-precipitation method. Ammonia hydroxide (NH 4 OH), ethanol and indium nitrate (In(NO 3 ) 2 ·9H 2 O) were used as raw materials to obtain the precursor, which was calcined in a furnace at 300°C for 2h to get yellow powder. The as-prepared In 2 O 3 NP powder was dissolved in methanol and dropped on Pt interdigitated electrode, which was fabricated with photolithographic techniques. After that, the sensor was annealed at 600℃ for 30 minutes. Surface morphology and structural properties of In 2 O 3 powder were investigated by field-emission scanning electron microscopy (FE-SEM), transmission electron microscopes (TEM) and X-ray diffraction (XRD). The sensing properties of In 2 O 3 NPs toward methane gas were investigated at various operating temperatures (200-500℃). The response of the sensor was defined as R = (R a -R g )/R g , where R a and R g represent the resistance of the sensor in air and CH 4 gas, respectively. Results and Conclusions The SEM image shows that indium oxide is composed of the spherical nanoparticles and the TEM image (Figure 1) confirms its spherical structure with a diameter of about 20 nm. The XRD result reveals that all the diffraction peaks are in good agreement with the cubic structure In 2 O 3 (JCPD 06-0416). No impurity peaks were found, and the diffraction peaks had high diffraction intensity, which indicated that In 2 O 3 had high purity and crystallinity. The response of the In 2 O 3 NP sensor increased and reached a maximum (R=6.81) at 350 ℃ and decreased with the increasing temperature (Figure 2). Therefore, this temperature is optimized and used for subsequent experiments. The higher response compared to other groups means that the prepared sensor has a good potential for the detection of methane. Limit of detection, long-term stability, repeatability and selectivity are also important parameters for a successful sensor. Therefore, we will conduct a number of follow-up experiments to further analyze the performance of In 2 O 3 NP sensor. References [1] D.P. Xue, Zh. Zhang, et al. Hydrothermal synthesis of methane sensitive porous In 2 O 3 nanosheets. Materials Letters 252 (2019) 169–172 [2] S. Basu, P.K. Basu, et al. Nanocrystalline metal oxides for methane sensors: role of noble metals. J. Sens. 2009 (2009) [3] B. Comert, N. Akin, et al. Titanium Dioxide Thin Films as Methane Gas Sensors. IEEE SENSORS JOURNAL, VOL.16, NO.24, DECEMBER 15, 2016 [4] L.P. Yang, Zh. Wang, et al. Synthesis of Pd-loaded mesoporous SnO 2 hollow spheres for highly sensitive and stable methane gas sensors. RSC Adv., 2018, 8, 24268 [5] W.J. Li, J.R. Liang, et al. Synthesis and room temperature CH 4 gas sensing properties of vanadium dioxide nanorods. Materials Letters 173 (2016) 199–202 Figure 1
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2020
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  • 9
    Online Resource
    Online Resource
    The Electrochemical Society ; 2009
    In:  ECS Transactions Vol. 25, No. 4 ( 2009-09-25), p. 301-308
    In: ECS Transactions, The Electrochemical Society, Vol. 25, No. 4 ( 2009-09-25), p. 301-308
    Abstract: Ta(C)N thin films were deposited by plama-enhanced atomic layer deposition using an alternate supply of tertiary amyl imido-tris(dimethylamido) tantalum [TAIMATA] and hydrogen plasma at 230°. Hydrogen plasma acted as an effective reducing agent for TAIMATA. The film thickness/cycle was saturated at 0.132nm/cycle, when the source pulse time exceeds 5 sec. The resistivity of Ta(C)N films was 1000 μΩ-cm, which is higher value as the application of Cu diffusion barrier material. However, the resistivity of TaN films improved with the increase of hydrogen plasma time because of the decrease of Ta3N5 ( 〉 106 μΩ-cm) phase formed by insufficient active hydrogen radical to reduce alkyl groups in TAIMATA, the formation of Ta-C (30 μΩ-cm) phase, and the increase of crystallinity of cubic-TaN. By applying higher plasma power, the lattice mismatch between Ta(C)N and CVD-Cu can be minimized. As a result, Ta(C)N films showed an improved adhesion to CVD-Cu.
    Type of Medium: Online Resource
    ISSN: 1938-5862 , 1938-6737
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2009
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  • 10
    In: ECS Transactions, The Electrochemical Society, Vol. 25, No. 40 ( 2010-04-16), p. 119-126
    Abstract: Here in, thin film transistors (TFTs) were fabricated with the tin oxide channel, deposited by using ultralow-pressure sputtering (ULPS), are reported. The effect of ULPS on the device performance of the tin oxide TFTs was investigated. The TFTs with tin oxide channel, deposited by conventional sputtering pressure (CSP), did not show a promising performance. However, the saturation mobility and threshold voltage of the ULPS SnOx TFTs were improved to ~ 3.9 cm2/Vs and ~ 0.6 V, respectively. The improved device performance of ULPS film was attributed to the decreased carrier concentration, which was originated from the formation of nano-crystalline phase and the higher film density compared to CSP film. We also compared the crystalline structure of ULPS and CSP film by using high-resolution transmission electron microscopy
    Type of Medium: Online Resource
    ISSN: 1938-5862 , 1938-6737
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2010
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