In:
ECS Transactions, The Electrochemical Society, Vol. 33, No. 3 ( 2010-10-01), p. 25-29
Abstract:
In this work, epitaxial grown gadolinium oxide (Gd2O3) has been investigated as promising high-k gate dielectric for future CMOS generations. Fully functional metal gate MOS capacitors and MOS field effect transistors (MOSFETs) on p- and n-type silicon substrates with titanium nitride (TiN) gate electrode have been fabricated in a gentle gate-last process and are electrically characterized in detail.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2010
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