In:
ECS Transactions, The Electrochemical Society, Vol. 3, No. 5 ( 2006-10-20), p. 449-455
Abstract:
Heteroepitaxial growth of 3C-SiC on Si(110) substrate has been successfully conducted at T=1000{degree sign}C by using monomethylsilane as a single source gas. X-ray diffraction (XRD) reveals that the growth orientation of the film is rotated and a 3C-SiC (111) film is formed on this Si(110) substrate. The film quality, as evaluated with the half width of the XRD rocking curve, shows betterment from that of 3C-SiC(111)/Si(111) film. The lattice constant anisotropy (a//-a⊥)/a// between the lateral and the growth directions also decreased by a factor of four from that of 3C-SiC(111)/Si(111), and the two lattice constants approach to that of bulk 3C-SiC. These results indicate significant reduction in the strain of the 3C-SiC film in this 3C-SiC(111)/Si(110) system. XRD-scan indicates presence of double domains with almost equal areas.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2006
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