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  • Articles  (412)
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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 4253-4258 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 6839-6842 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-voltage (C-V) characteristics of the low-pressure chemical vapor deposited phospho-silicate glass (P-glass) films deposited on thin (∼250 A(ring)) thermal SiO2 films on silicon have been investigated as a function of the phosphorus content and rapid thermal annealing in the temperature range of room temperature to 450 °C carried out in various ambients. Simultaneously, the quantitative hydrogen concentration depth profiles of both as-deposited and annealed oxide films were obtained using the nuclear reaction technique. The C-V characteristics were found to be related to the charges in the oxide. The charge density, in turn, is controlled by both the phosphorus and the hydrogen (hydrogenous species) concentration in the films. An interactive relationship that controls the C-V characteristics is postulated between the presence of phosphorus and hydrogen and their concentrations in these oxides. A schematic model is presented that also postulates that hydrogenous species of two different characters are present in these films: one that easily comes out of the film at low temperature annealing and the other that comes out at significantly higher temperatures.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6067-6069 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have succeeded in forming single-phase MnBi in its two ferromagnetic phases, the low-temperature phase (LTP) and the quenched high-temperature phase (QHTP). The formation process involves rapid solidification into the amorphous state followed by thermal annealing. The crystallization of the amorphous material involves a series of transformations before single-phase LTP ((approximately-greater-than)95 wt. %) is finally achieved at a temperature of 543 K. Further heating transforms LTP into its high-temperature structure at 635 K, which upon quenching to room temperature gives the QHTP. Some magnetic properties of LTP and QHTP are presented.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6275-6277 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In contrast to most ferromagnetic materials, the low-temperature phase of MnBi exhibits an increased coercivity, Hc, with temperature. μ0Hc has a value of 0.2 T at room temperature, and rises dramatically to a maximum value of 1.9 T at 550 K. In the temperature region near its maximum value, Hc is much larger than that of Nd-Fe-B and has a very-low-temperature coefficient. For this reason, MnBi has a great potential as a permanent magnet material at high temperatures. To describe the temperature dependence of Hc, we develop a hybrid domain-wall pinning model which combines Hilzinger and Kronmüller's scaling theory for an anisotropic domain wall with Gaunt's theory of thermal activation. The hybrid model gives an excellent fit to the temperature dependence of Hc and provides good estimates for the domain-wall energy and thickness over the temperature range studied.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method to improve the morphology and the microstructure of sputtered bismuth-substituted garnet films for optical storage is discussed. The method employs a high ramp up rate and recurrent annealing as well as quenching in an air environment, which results in smaller grain size, smoother surface, and less void volume in the garnet films than that from a conventional oven annealing. We have discovered that samples prepared with a more recurrent annealing only appeared as a single garnet phase, and the samples with a less recurrent annealing appeared as a garnet phase as well as DyFeO3 phase. We observed the microstructure of the annealed films with scanning electron microscopy (SEM). By applying the new method, the as-deposited films had been successfully crystallized to the (BiDy)3(FeGa)5O12 garnet phase with the grain size of about 300–400 A(ring). They exhibited excellent magneto-optical properties with a high coercive force about 1300 Oe and an effective Kerr angle of 1.5°. The crystallization process of as-deposited amorphous films as well as the structure, composition, and magnetic and magneto-optical properties of the crystallized garnet films were examined.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5826-5833 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the analytic expressions given in the preceding article, S. T. Pai [J. Appl. Phys. 71, 5820 (1992)] the concerned physical quantities n, N, V, Ez, Γ−, Γ+, and Jz and many others for dc glow discharges were calculated and systematically analyzed under various conditions. Several physically significant points have been brought forward via the analysis. Comparisons between the present results and the corresponding ones obtained by previous investigators showed similarities between them in many aspects. Such similarities signify the wide range applicability of the present model. The builtin feature of mode indexing in the model has been quantitatively demonstrated. Results yielded from such a demonstration are consistent with the corresponding physical situations.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2947-2950 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of exposing low-temperature-annealed chemical vapor deposited phosphosilicate glass films directly to water on the properties of such oxides has been studied. The capacitance-voltage (C-V) curves of these as-deposited oxides have been known to shift on annealing at temperatures in the range of 150–1000 °C in gaseous or vacuum ambients. It is found that when exposed to water, with the increasing duration of water exposure, the C-V curves of these annealed oxides gradually shift back, to the original preanneal location on the voltage axis. The effect, which is similar to the reported effect of water-related traps, is directly observed without using avalanche injection. The C-V recovery is, however, limited to oxides annealed at temperatures ≤450 °C. Hydrogen concentration analysis clearly associates these C-V shifts with changes in concentration resulting from an anneal in a gaseous ambient or to the water exposure. If, however, the oxides are dry annealed at temperatures of 500 °C or higher, the C-V recovery, on water exposure, is very small. So is the increase in the hydrogen concentration, confirming the role of the hydrogenous species in the oxide. The results also suggest a structural change in the oxide occurring at temperatures above 500 °C and leading to oxides that have much lower water solubility compared to that in as-deposited oxides or oxides annealed at temperatures ≤450 °C. Possible mechanisms of oxide charge generation are discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 7690-7699 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption and desorption kinetics for Xe on three Pt single crystalline surfaces have been measured using threshold temperature programmed desorption measurements. It has been found that the first-order desorption kinetic parameters at zero coverage for Xe on Pt(111) (E0d =5.73±0.50 kcal/mol; ν0d=1012.5±0.9 s−1) are in excellent agreement with measurements made by a modulated molecular beam method [E0d =5.65±0.35 kcal/mol; ν0d=1012.1 s−1]. The presence of step defect sites of varying density on Pt(557) (1/6 defects) and on Pt(112) (1/3 defects) is shown to have a marked influence on Xe desorption kinetics, producing larger values of E0d(approximately-equal-to)8.5–8.7 kcal/mol and larger values of ν0d (approximately-equal-to)1014 s−1 compared to Pt(111). In addition, for Pt(111), slight attractive Xe–Xe interactions are observed, whereas for Xe adsorption on step sites, repulsive Xe–Xe interactions are observed as the steps fill. Xe adsorption kinetics on Pt(111) at 87 K are consistent with an island growth mechanism. In contrast, on Pt(557) and Pt(112), the adsorption process does not seem to produce island growth on the terraces. These results, taken together, show that using Xe, defect sites on metals may be probed effectively with adsorption and desorption kinetic methods.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 5200-5201 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The observation of photon-induced dissociation and desorption of submonolayer molecular O2 chemisorbed on Pd(111) is reported. The cross sections estimated for photodissociation and photodesorption are each ∼3×10−21 cm2.
    Type of Medium: Electronic Resource
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