In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 831 ( 2004)
Abstract:
InGaN/GaN multiple quantum wells (MQWs) with [0001], 〈 11.2 〉 , and 〈 11.0 〉 orientations have been fabricated by means of the re-growth technique on patterned GaN templates with striped geometry, normal planes of which are (0001) and {11.0}, on sapphire (0001) substrates. It was found that photoluminescence intensity of the {11.2} QW is the strongest among the three QWs, and its internal quantum efficiency was estimated to be as large as about 40% at room temperature. The radiative recombination lifetime of the {11.2} QW was about 0.39 ns at 14 K, which was 3.8 times shorter than that of conventional c -oriented QWs emitting at a similar wavelength. These findings are well explained by the high internal quantum efficiency in the {11.2} QW owing to the suppression of piezoelectric fields.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-831-E5.5
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2004
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