ISSN:
1432-0630
Keywords:
68.60.+q
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We determined the perpendicular overlayer mismatch for type A and type B NiSi2 samples of thicknesses ranging from about 200 to 1000 Å via bulk x-ray diffraction. An increase in the density of dislocations which are formed to release the strain at the growth temperature leads to an increase in the magnitude of mismatch and strain at room temperature. The results on the thinner type A samples show that the perpendicular overlayer mismatch is found to depend on the overlayer thickness even when no dislocations are present at the interface. This may be due to point defects in the epitaxial NiSi2 layers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00624605
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