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  • 85.30  (4)
  • Ultrastructure  (3)
  • Agriculture  (1)
  • Springer  (7)
  • Sustainable Conservation  (1)
  • 1
    Publication Date: 2021-07-24
    Description: This project has focused on better understanding the potential impact of On-Farm Flood Capture and Recharge (OFFCR) on groundwater quality pertaining to salts and nitrate and on assessing potential management opportunities. To achieve these goals, we used a combination of field and modeling studies. For the field study, soil cores were taken to a depth of 30 feet in replicate across fields with three different specialty crops identified as important to the San Joaquin Valley (tomatoes, almonds, vineyards) and with potential suitability for OFFCR. A prime goal of the field study was to provide data for parameterizing two models developed to assess nitrate, salt and water transport through the vadose zone, prior to percolating into the groundwater aquifer.However, the field study also resulted in key findings that show its value as a stand-alone study: 1) Nitrate concentrations are highest in the upper vadose zone and affected by texture. Those effects are not evident in the deeper vadose zone. 2) Vadose zone nitrate concentrations are affected by the crop grown. These results suggest an opportunity for lower legacy mass transport for grapes and higher legacy mass transport for both tomatoes and almonds.3) Variability in individual farmers’ past and present fertilizer and water management practices contributes to different legacy salt and nitrate loads in the vadose zone.Data from the field study and other related and concurrent OFFCR field efforts were used during model development. The overall modeling approach was designed to model nitrate and salt transport for lands under OFFCR operation for different crop types, vadose zone characteristics and groundwater characteristics. The defined goals of this design and modeling approach were to: 1) model nitrate and salt movement through the vadose zone and into groundwater; 2) test the model against scenarios that consider different recharge rates, cultural practices, soil types, and depths to groundwater, assessing the timing and magnitude of loading through the vadose zone and the effects on underlying groundwater; and 3) recommend management practices to mitigate potential groundwater impacts. To achieve these goals, two models were integrated to simulate nitrate and salt transport through the vadose zone to groundwater under different scenarios: a 1D Hydrus model and an analytical groundwater model (AGM).
    Description: USDA Specialty Crop Block Grants, CA. Grant Agreement SCB14028
    Description: Nitrate Leaching Risk from Specialty Crop Fields During On-Farm Managed Floodwater Recharge in the Kings Groundwater Basin [USDA Project No: PIN #26174]
    Description: Groundwater Recharge Project, 2016
    Description: On-Farm Recharge Studies, Central Valley, CA
    Keywords: Agriculture ; Chemistry ; Earth Sciences ; Engineering ; Environment ; Management ; Planning ; Pollution ; on-farm recharge ; floodmar ; groundwater ; management ; agriculture ; water quality ; vadose zone ; nitrate ; BMPs ; Kings Groundwater Basin
    Repository Name: AquaDocs
    Type: monograph
    Format: application/pdf
    Format: application/pdf
    Format: 27
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  • 2
    ISSN: 1432-0533
    Keywords: Human rabies ; Negri bodies ; Ultrastructure
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Light-and electron-microscopical studies were conducted on necropsy material from six cases of rabies encephalitis including three with the unusual feature of surviving for over 14 days as a result of intensive medical care. This included administration of antiviral agents and interferon inducers and prevention of hypoxia by intermittent positive pressure ventilation. In all these cases, typical Negri bodies were demonstrated. Inflammatory reaction was absent or minimal. Unlike the cases with short survival where Negri bodies were infrequently seen and restricted mostly to the hippocampus, in cases with prolonged survival, they were present in large number, widely distributed throughout the grey matter of the brain. The associated inflammatory reaction in these cases, however, did not keep pace with the increase in number of inclusion bodies. Peripheral neuritis was observed in two of these cases, which also showed myelitis involving the cervical region and inflammation of dorsal root ganglia. One of them showed necrosis and severe inflammation of the lower cervical sympathetic ganglion. An electron-microscopical study conducted in four cases showed three forms of the inclusion body in the cytoplasm of neurons.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Acta neuropathologica 79 (1990), S. 456-460 
    ISSN: 1432-0533
    Keywords: Rosenthal fibers ; Immunohistochemistry ; Ultrastructure ; Neoplastic and reactive astrocytes
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The nature of Rosenthal fibres (RF) was investigated in eight cases each of low-grade astrocytoma and reactive gliosis using immunohistochemical (IH) staining for glial fibrillary acidic protein (GFAP), electron microscopy (EM) and immunoelectron microscopy (IEM) by immunogold labelling technique. By IH under light microscopy (LM), three types of RF were seen, uniformly positive (type I), rim positive (type II) and completely negative (type III). EM showed variation in structural pattern of RF. Some RF contained large amount of glial filaments (GF) intermingled with RF while others with a large amount of electron dense material and less GF. Thus, the presence and amount of GF in RF appear to be responsible for the different types of IH staining under LM. IEM showed that all RF including the ones consisting of entirelh amorphous material possess immunoreactivity for GFAP. It is suggested that RF formation is a two-stage process, staring with excessive accumulation of GF within astrocytic processes followed by their gradual alteration into electron-dense amorphous material under the influence of some unknown metablic or other factors. The quantitative analysis of different types of RF suggests a difference in the rate of formation of RF in neoplastic and reactive conditions.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 48 (1989), S. 437-443 
    ISSN: 1432-0630
    Keywords: 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Computer studies have been made on the high frequency characteristics of symmetrically doped flat profile double drift region (DDR) InP and GaAs impatts in the mm-wave (60–100 GHz) frequency band. The spatial distribution of high frequency negative resistance and reactance in the depletion layer of DDR devices and their admittance properties have been investigated. The results indicate that DDR InP impatts should have higher drift zone voltage drop, higher negative resistance and higher negative conductance compared to their GaAs counterparts designed for the same range of mm-wave frequencies. Furthermore, the negative resistance peak is larger in magnitude for InP impatts compared to that for GaAs impatts. It is thus observed that DDR InP impatts should be superior to their GaAs counterparts as regards mm-wave power generation with high conversion efficiency.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1432-0630
    Keywords: 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High-frequency analysis has been carried out to predict the rf performance of 〈111〉, 〈110〉 and 〈100〉 oriented p + nn +, n + pp + (single drift region) and n + npp + (double drift region) GaAs IMPATT diodes for opertion at 35 and 60 GHz. The microwave performance is observed to be highly sensitive to crystal orientation in case of p + nn + and n + npp + diodes whereas orientation of the substrate has negligible effect on n + pp + avalanche diodes. The calculation shows that 〈111〉 oriented GaAs IMPATT diode would provide the largest magnitude of negative resistance and negative conductance for both SDR p + nn + and DDR n + npp + diodes which indicates that high microwave power with high conversion efficiency can be realised from these 〈111〉 oriented GaAs devices. This result can be explained from the experimental data of electron and hole ionization rates for different orientations in GaAs.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1432-0630
    Keywords: 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effect of mobile space charge on avalanche zone width and conversion efficiency of single drift region (SDR) indium phosphide impatts at 12 and 60 GHz has been investigated. The results show thatp +nn+ InP diodes have a narrower avalanche zone and a higher conversion efficiency compared ton +pp+ diodes for both the frequencies at normal operating current densities. The expansion of avalanche zone and efficiency degradation at high current levels are more pronounced inp +nn+ at 12 GHz and inn +pp+ at 60 GHz.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1432-0630
    Keywords: 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A generalized small-signal computer simulation of double avalanche region (DAR) n +-p-v-n-p + Si and InP IMPATT diodes has been carried out for different frequencies and current densities taking both drift and diffusion of charge carriers into account. The simulation results show that both symmetrically and asymmetrically doped devices based on Si and InP exhibit discrete negative conductance frequency bands separated by positive conductance frequency bands. The magnitudes of both negative conductance and negative resistance of InP devices are larger than those of Si devices in case of symmetrical and asymmetrical diodes. Further, the negative resistance profiles in the depletion layer of these diodes exhibit a single peak in the middle of the drift layer in contrast to double peaks in double drift region diodes.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Acta neuropathologica 41 (1978), S. 169-171 
    ISSN: 1432-0533
    Keywords: Pituitary gland ; Oncocytic adenoma ; Ultrastructure
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Two cases of oncocytic adenoma occurring in the pituitary are reported. Both were men aged 40 and 50 years respectively and there was no evidence of endocrine abnormality. In both the tumours many cells showed abundant acidophilic finely granular cytoplasm which had not stained positively with PAS-orange G stain. Electron microscopically the cells contained numerous mitochondria associated with marked reduction of other cytoplasmic organelles including the secretory granules.
    Type of Medium: Electronic Resource
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