In:
Nanoscale, Royal Society of Chemistry (RSC), Vol. 13, No. 34 ( 2021), p. 14435-14441
Abstract:
A high optoelectronic performance ReS 2 /ReSe 2 van der Waals (vdW) heterojunction phototransistor utilizing thin hafnium oxide (HfO 2 ) as a local-back-gate dielectric layer was prepared and studied. The heterojunction-based phototransistor exhibits a superior electrical performance with a large rectification ratio of ∼10 3 . Furthermore, unlike diode-like heterojunction devices, the innovative introduction of a local-back-gate in this phototransistor provides an outstanding gate-tunable capability with an ultra-low off-state current of 433 fA and a high on/off current ratio of over 10 6 . And under optical excitation of a wide spectrum from 400 to 633 nm, an excellent photodetection responsivity at the 10 4 A W −1 level and the maximum normalized detectivity of 1.8 × 10 15 Jones @ 633 nm have been demonstrated. Such high performances are attributed to the band alignment of the type-II heterojunction and the suppression of dark current by the local-back-gate. This work provides a promising reference for two-dimensional (2D) Re-based heterojunction optoelectronic devices.
Type of Medium:
Online Resource
ISSN:
2040-3364
,
2040-3372
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2021
detail.hit.zdb_id:
2515664-0
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