In:
Journal of Materials Chemistry A, Royal Society of Chemistry (RSC), Vol. 10, No. 23 ( 2022), p. 12632-12642
Abstract:
AgNbO 3 -based antiferroelectric films have attracted emerging attention in the field of dielectric energy storage and possess promising applications in photocatalysis and microwave devices. Unfortunately, it remains a challenge to fabricate pure-phase AgNbO 3 films on Si substrates, precluding their further integration into electronic devices. Here, we, for the first time, report phase-pure AgNbO 3 films on Pt/Ti/SiO 2 /Si substrates by a chemical solution deposition (CSD) method. A facile CSD route without using the hazardous pyridine additive is demonstrated to obtain a stable AgNbO 3 precursor for spin-coating films. By comprehensively controlling the heat treatment conditions, secondary phases are eliminated in the deposited films. The phase transitions of the AgNbO 3 films are also investigated, where intriguingly the room temperature phase is determined to be the antiferroelectric M 2 phase, rather than the commonly reported M 1 phase in bulk AgNbO 3 . Meanwhile, the relative dielectric permittivity surpasses 300 at room temperature and maintains at ∼400 with low dielectric loss ( 〈 0.05; measured at frequencies of 0.1–1 MHz) over a wide temperature range of 150–350 °C, within a 5% variation. This work provides an easy-to-implement process of AgNbO 3 films which may attract scientific interests and potential applications.
Type of Medium:
Online Resource
ISSN:
2050-7488
,
2050-7496
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2022
detail.hit.zdb_id:
2702232-8
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