In:
Inorganic Chemistry Frontiers, Royal Society of Chemistry (RSC), Vol. 10, No. 12 ( 2023), p. 3723-3729
Abstract:
As the core carrier of integrated circuits, packaging substrates usually respond in time to the evolution of electronic products. Among which, ceramic substrate materials are desired to have excellent dielectric and voltage-resistant properties, high reliability, and good thermal and chemical stability. The β-Ga 2 O 3 ceramic prepared in this work has excellent microwave dielectric properties with a Q × f value of ∼133 140 GHz ( Q = 1/tan δ ), ε r of ∼9.57, and temperature coefficient of resonant frequency (TCF) value of ∼−58.2 ppm °C −1 , which meet the requirements of high-frequency packages. Another highlight is that the β-Ga 2 O 3 ceramic has a higher dielectric strength of ∼30 kV mm −1 compared with conventional ceramic substrates, such as Al 2 O 3 , AlN, etc ., allowing it to be used in higher-power circuits. Meanwhile, a flexural strength of ∼110 MPa, a thermal expansion of ∼+8.9 ppm °C −1 and a thermal conductivity of ∼15 W m −1 K −1 have been achieved in the β-Ga 2 O 3 ceramic. In addition, a patch antenna for sub-6 GHz applications was designed and fabricated using the Ga 2 O 3 ceramic substrate, showing good performance with a wide bandwidth of ∼140 MHz, a return loss S 11 of ∼−21 dB at the center frequency, a radiation efficiency of ∼92% and a gain of ∼5 dBi. The stated results guarantee that the Ga 2 O 3 ceramic shows great potential in applications towards high-frequency and high-power fields.
Type of Medium:
Online Resource
ISSN:
2052-1553
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2023
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