In:
Materials Chemistry Frontiers, Royal Society of Chemistry (RSC), Vol. 7, No. 10 ( 2023), p. 2059-2067
Abstract:
Doped 2D transition metal dichalcogenides have attracted much attention as room-temperature ferromagnetism can be realized in such semiconductors. For example, the magnetism of vanadium-doped WS 2 (V-WS 2 ) has been revealed, but there is still confusion about how the substituted vanadium atoms affect the carrier scattering of V-WS 2 . Here, we study the electron–phonon coupling and carrier scattering of V-WS 2 by temperature-dependent Raman spectroscopy and electrical transport measurements. We identify a characteristic Raman peak at ∼212 cm −1 , a fingerprint for V-WS 2 . We also reveal that the electron–phonon coupling is strengthened in V-WS 2 and becomes more sensitive to temperature, which suppresses the carrier mobility and improves the sensitivity of its electronic performance to temperature. Moreover, the substituted vanadium not only causes an n- to p-type transition of the carrier transport behavior but also serves as charged impurities, making ionization scattering dominate the carrier transport process in V-WS 2 . Such modulation of carrier transport behavior in V-WS 2 will facilitate its application in electronic and spintronic devices.
Type of Medium:
Online Resource
ISSN:
2052-1537
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2023
detail.hit.zdb_id:
2867881-3
Permalink