In:
Materials Advances, Royal Society of Chemistry (RSC), Vol. 3, No. 5 ( 2022), p. 2425-2433
Abstract:
Tin selenide (SnSe), a group IV–VI compound semiconductor material, is used to fabricate various solid-state devices such as memory switching devices, P–N junction diodes, Schottky barrier diodes, etc. In the present study, a Cu/p-SnSe Schottky junction was fabricated by a thermal evaporation technique. SnSe charge was grown using the DVT method, and subsequently its film was deposited using a thermal evaporation process. Energy dispersive X-ray analysis (EDAX) confirmed the stoichiometry of the elements in the as deposited thin film. X-ray diffraction (XRD) was used to identify its structure, which revealed an orthorhombic structure. Raman spectroscopy revealed vibrational modes, whereas UV-Vis spectroscopy revealed an optical band gap of 1.75 eV. Structural information was obtained using AFM, SEM, HR-TEM, and SAED. A Cu thin film was deposited on top of the SnSe thin film, and a Schottky device was fabricated. The Schottky device parameters were determined based on the current–voltage ( I – V ) characteristics. We observed that, under illumination conditions, the device performance improves, which indicates that the fabricated diode exhibits an adequate photosensitive nature.
Type of Medium:
Online Resource
ISSN:
2633-5409
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2022
detail.hit.zdb_id:
3031236-X
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