In:
Materials Horizons, Royal Society of Chemistry (RSC), Vol. 9, No. 10 ( 2022), p. 2633-2643
Abstract:
Controlling crystal growth and reducing the number of grain boundaries are crucial to maximize the charge carrier transport in organic–inorganic perovskite field-effect transistors (FETs). Herein, the crystallization and growth kinetics of a Sn( ii )-based 2D perovskite, using 2-thiopheneethylammonium (TEA) as the organic cation spacer, were effectively regulated by the hot-casting method. With increasing crystalline grain size, the local charge carrier mobility is found to increase moderately from 13 cm 2 V −1 s −1 to 16 cm 2 V −1 s −1 , as inferred from terahertz (THz) spectroscopy. In contrast, the FET operation parameters, including mobility, threshold voltage, hysteresis, and subthreshold swing, improve substantially with larger grain size. The optimized 2D (TEA) 2 SnI 4 transistor exhibits hole mobility of up to 0.34 cm 2 V −1 s −1 at 295 K and a higher value of 1.8 cm 2 V −1 s −1 at 100 K. Our work provides an important insight into the grain engineering of 2D perovskites for high-performance FETs.
Type of Medium:
Online Resource
ISSN:
2051-6347
,
2051-6355
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2022
detail.hit.zdb_id:
2744250-0
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