In:
Nanoscale, Royal Society of Chemistry (RSC), Vol. 13, No. 42 ( 2021), p. 17945-17952
Abstract:
Recently, ternary transition metal chalcogenides Ta 2 X 3 Se 8 (X = Pd or Pt) have attracted great interest as a class of emerging one-dimensional (1D) van der Waals (vdW) materials. In particular, Ta 2 Pd 3 Se 8 has been actively studied owing to its excellent charge transport properties as an n-type semiconductor and ultralong ballistic phonon transport properties. Compared to subsequent studies on the Pd-containing material, Ta 2 Pt 3 Se 8 , another member of this class of materials has been considerably less explored despite its promising electrical properties as a p-type semiconductor. Herein, we demonstrate the electrical properties of Ta 2 Pt 3 Se 8 as a promising channel material for nanoelectronic applications. High-quality bulk Ta 2 Pt 3 Se 8 single crystals were successfully synthesized by a one-step vapor transport reaction. Scanning Kelvin probe microscopy measurements were used to investigate the surface potential difference and work function of the Ta 2 Pt 3 Se 8 nanoribbons of various thicknesses. Field-effect transistors fabricated on exfoliated Ta 2 Pt 3 Se 8 nanoribbons exhibited moderate p-type transport properties with a maximum hole mobility of 5 cm 2 V −1 s −1 and an I on / I off ratio of 〉 10 4 . Furthermore, the charge transport mechanism of Ta 2 Pt 3 Se 8 was analyzed by temperature-dependent transport measurements in the temperature range from 90 to 320 K. To include Ta 2 Pt 3 Se 8 in a building block for modern 1D electronics, we demonstrate p–n junction characteristics using the electron beam doping method.
Type of Medium:
Online Resource
ISSN:
2040-3364
,
2040-3372
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2021
detail.hit.zdb_id:
2515664-0
Permalink