In:
Nanoscale Advances, Royal Society of Chemistry (RSC), Vol. 4, No. 22 ( 2022), p. 4886-4894
Abstract:
Photoconduction (PC) properties were investigated for ternary indium aluminium nitride (In x Al 1− x N) nanorods (NRs) with different indium compositions ( x ) from 0.35 to 0.68, as grown by direct-current reactive magnetron sputter epitaxy. Cross-sectional scanning transmission electron microscopy (STEM) reveals single-crystal quality of the vertically aligned In x Al 1− x N NRs. Single-rod photodetector devices with good ohmic contacts were fabricated using the focused-ion-beam technique (FIB), where the In-rich In 0.68 Al 0.32 N NR exhibits an optimal photocurrent responsivity of 1400 A W −1 and photoconductive gain of 3300. A transition from a positive photoresponse to a negative photoresponse was observed, while increasing the In composition x from 0.35 to 0.57. The negative PC was further enhanced by increasing x to 0.68. A model based on the coexistence and competition of deep electron trap states and recombination centers was proposed to explain the interesting composition-dependent PC in these ternary III-nitride 1D nanostructures.
Type of Medium:
Online Resource
ISSN:
2516-0230
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2022
detail.hit.zdb_id:
2942874-9
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