In:
Nanoscale Advances, Royal Society of Chemistry (RSC), Vol. 4, No. 19 ( 2022), p. 4114-4121
Abstract:
HfO 2 -based ferroelectric (FE) materials have emerged as a promising material for non-volatile memory applications because of remanent polarization, scalability of thickness below 10 nm, and compatibility with complementary metal–oxide–semiconductor technology. However, in the metal/FE/insulator/semiconductor, it is difficult to improve switching voltage ( V sw ), endurance, and retention properties due to the interfacial layer (IL), which inevitably grows during the fabrication. Here, we proposed and demonstrated oxygen scavenging to reduce the IL thickness in an HfZrO x -based capacitor and the thinner IL was confirmed by cross-sectional transmission electron microscopy. V sw of a capacitor with scavenging decreased by 18% and the same P r could be obtained at a lower voltage than a capacitor without scavenging. In addition, excellent endurance properties up to 10 6 cycles were achieved. We believe oxygen scavenging has great potential for future HfZrO x -based memory device applications.
Type of Medium:
Online Resource
ISSN:
2516-0230
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2022
detail.hit.zdb_id:
2942874-9
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