In:
Journal of Materials Chemistry C, Royal Society of Chemistry (RSC), Vol. 10, No. 4 ( 2022), p. 1511-1516
Abstract:
GaSb nanowires integrated on a silicon-based substrate are of great significance for p-type field-effect transistors. In particular, chips are becoming more and more miniaturized, and complicated dielectric engineering needs to be avoided. Therefore, the introduction of junction field-effect transistor (JFET) can be used to improve the performance of transistors. We demonstrated a heterostructure p-channel depletion type GaSb junction field-effect transistor by combining with n-WS 2 sheets. Typical diode characteristics are observed in n-WS 2 /p-GaSb heterostructure diodes, with a high rectification ratio of ∼10 4 . The JFET has excellent electrical features with an ON/OFF ratio of ∼10 4 and the sub-threshold swing (SS ≈ 723 mV dec −1 ). With the back gate control the ON/OFF current ratio is improved to ∼10 6 and the low SS is restrained to 166 mV dec −1 . Moreover, due to the electrical properties of the heterojunction the JFET and p–n diodes maintain good stability at high temperatures. Therefore, the WS 2 /GaSb heterojunction enables the miniaturization of an integrated power electronic system and provides a promising route to low power electronics.
Type of Medium:
Online Resource
ISSN:
2050-7526
,
2050-7534
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2022
detail.hit.zdb_id:
2702245-6
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