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  • Proceedings of the National Academy of Sciences  (2)
  • Biology  (2)
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  • Proceedings of the National Academy of Sciences  (2)
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  • 1
    Online Resource
    Online Resource
    Proceedings of the National Academy of Sciences ; 2019
    In:  Proceedings of the National Academy of Sciences Vol. 116, No. 13 ( 2019-03-26), p. 6397-6406
    In: Proceedings of the National Academy of Sciences, Proceedings of the National Academy of Sciences, Vol. 116, No. 13 ( 2019-03-26), p. 6397-6406
    Abstract: Memory is stored in neural networks via changes in synaptic strength mediated in part by NMDA receptor (NMDAR)-dependent long-term potentiation (LTP). Here we show that a cholecystokinin (CCK)-B receptor (CCKBR) antagonist blocks high-frequency stimulation-induced neocortical LTP, whereas local infusion of CCK induces LTP. CCK −/− mice lacked neocortical LTP and showed deficits in a cue–cue associative learning paradigm; and administration of CCK rescued associative learning deficits. High-frequency stimulation-induced neocortical LTP was completely blocked by either the NMDAR antagonist or the CCKBR antagonist, while application of either NMDA or CCK induced LTP after low-frequency stimulation. In the presence of CCK, LTP was still induced even after blockade of NMDARs. Local application of NMDA induced the release of CCK in the neocortex. These findings suggest that NMDARs control the release of CCK, which enables neocortical LTP and the formation of cue–cue associative memory.
    Type of Medium: Online Resource
    ISSN: 0027-8424 , 1091-6490
    RVK:
    RVK:
    Language: English
    Publisher: Proceedings of the National Academy of Sciences
    Publication Date: 2019
    detail.hit.zdb_id: 209104-5
    detail.hit.zdb_id: 1461794-8
    SSG: 11
    SSG: 12
    Location Call Number Limitation Availability
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  • 2
    Online Resource
    Online Resource
    Proceedings of the National Academy of Sciences ; 2020
    In:  Proceedings of the National Academy of Sciences Vol. 117, No. 10 ( 2020-03-10), p. 5204-5209
    In: Proceedings of the National Academy of Sciences, Proceedings of the National Academy of Sciences, Vol. 117, No. 10 ( 2020-03-10), p. 5204-5209
    Abstract: Traditionally, precipitates in a material are thought to serve as obstacles to dislocation glide and cause hardening of the material. This conventional wisdom, however, fails to explain recent discoveries of ultrahigh-strength and large-ductility materials with a high density of nanoscale precipitates, as obstacles to dislocation glide often lead to high stress concentration and even microcracks, a cause of progressive strain localization and the origin of the strength–ductility conflict. Here we reveal that nanoprecipitates provide a unique type of sustainable dislocation sources at sufficiently high stress, and that a dense dispersion of nanoprecipitates simultaneously serve as dislocation sources and obstacles, leading to a sustainable and self-hardening deformation mechanism for enhanced ductility and high strength. The condition to achieve sustainable dislocation nucleation from a nanoprecipitate is governed by the lattice mismatch between the precipitate and matrix, with stress comparable to the recently reported high strength in metals with large amount of nanoscale precipitates. It is also shown that the combination of Orowan’s precipitate hardening model and our critical condition for dislocation nucleation at a nanoprecipitate immediately provides a criterion to select precipitate size and spacing in material design. The findings reported here thus may help establish a foundation for strength–ductility optimization through densely dispersed nanoprecipitates in multiple-element alloy systems.
    Type of Medium: Online Resource
    ISSN: 0027-8424 , 1091-6490
    RVK:
    RVK:
    Language: English
    Publisher: Proceedings of the National Academy of Sciences
    Publication Date: 2020
    detail.hit.zdb_id: 209104-5
    detail.hit.zdb_id: 1461794-8
    SSG: 11
    SSG: 12
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
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