In:
Optics Letters, Optica Publishing Group, Vol. 47, No. 14 ( 2022-07-15), p. 3572-
Abstract:
In this Letter, we report an effective monolithic integration of a
metal oxide semiconductor field effect (MOSFET) phototransistor (PT) and a light-emitting diode (LED) on a GaN-on-Si LED epitaxial (epi)
wafer. Avoiding additional growth or Si diffusion, the PT was directly fabricated on the LED epi layer, providing a cost-effective and facile
method. As a driver, the PT could modulate both peak value of the light intensity and output current of the integrated LED. As an
ultraviolet (UV) detector, our PT showed sufficient responsivity. It was found that the gate-voltage-dependent photocurrent-response of the
device had a shorter response time, and a higher responsivity was obtained at a higher gate-voltage bias. The device demonstrated a
switching effect that the photoinduced current from the PT drove the LED when the UV lamp was turned on, whereas the photoinduced current
stopped driving upon powering off the UV lamp. The experiment proved that the integrated device working as a UV detector exhibited a fast
response time and a longstanding stability. We anticipate that such an approach could have potential applications for UV light detection and
visible light communication (VLC).
Type of Medium:
Online Resource
ISSN:
0146-9592
,
1539-4794
Language:
English
Publisher:
Optica Publishing Group
Publication Date:
2022
detail.hit.zdb_id:
243290-0
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