In:
Applied Optics, Optica Publishing Group, Vol. 59, No. 25 ( 2020-09-01), p. 7646-
Abstract:
We present the design of G e 1 − x S n x -on-Si waveguide photodetectors for the applications in the C- to U-bands. The GeSn photodetectors have been studied in respect to responsivity, dark current, and bandwidth, with light butt- or evanescent-coupled from an Si waveguide. With the introduction of 4.5% Sn into Ge, the GeSn waveguide PD with evanescent-coupling exhibits high responsivity of 1.25 A/W and 3 dB bandwidth of 123.1 GHz at 1.675 µm. Further increasing the Sn composition cannot improve the absorption in the U-band significantly but does lead to poorer thermal stability and higher dark current. This work suggests a promising avenue for future high-speed high-responsivity photodetection in the C- to U-bands.
Type of Medium:
Online Resource
ISSN:
1559-128X
,
2155-3165
Language:
English
Publisher:
Optica Publishing Group
Publication Date:
2020
detail.hit.zdb_id:
207387-0
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