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  • Optica Publishing Group  (5)
  • 1
    Online Resource
    Online Resource
    Demonstration of various optical directed logic operations by using an integrated photonic circuit
    Optica Publishing Group ; 2021
    In:  Optics Letters Vol. 46, No. 10 ( 2021-05-15), p. 2457-
    Details
    In: Optics Letters, Optica Publishing Group, Vol. 46, No. 10 ( 2021-05-15), p. 2457-
    Abstract: Optical directed logic is a novel logic operation scheme that employs electrical signals as operands to control the working states of optical switches to perform the logic operations. In this Letter, we propose and demonstrate an integrated photonic circuit which can implement five different optical logic operations by utilizing two optical modes. The proposed device is fabricated on a silicon-on-insulator substrate by using electron beam lithography and inductively coupled plasma etching processes. The static experimental results show that the fabricated device can implement five different operations correctly—XOR, XNOR, NOR, NOT, and AND—from which we can see that the signal-to-noise ratios are larger than 17.6 dB over the entire C band for all five logic functions. At last, all five logic operations with the speed of 10 Kbps are demonstrated. The proposed device with simple structure, large bandwidth, and versatility would be a promising candidate for information processing in optical mode division multiplexing networks.
    Type of Medium: Online Resource
    ISSN: 0146-9592 , 1539-4794
    URL: Article
    DOI: 10.1364/OL.423858
    Language: English
    Publisher: Optica Publishing Group
    Publication Date: 2021
    detail.hit.zdb_id: 243290-0
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  • 2
    Online Resource
    Online Resource
    Lattice-matched AlInN/GaN bottom DBR impact on GaN-based vertical-cavity-surface-emitting laser diodes: systematical investigations
    Optica Publishing Group ; 2023
    In:  Applied Optics Vol. 62, No. 13 ( 2023-05-01), p. 3431-
    Details
    In: Applied Optics, Optica Publishing Group, Vol. 62, No. 13 ( 2023-05-01), p. 3431-
    Abstract: In this paper, by using advanced numerical models, we investigate the impact of the AlN/GaN distributed Bragg reflector (DBR) and AlInN/GaN DBR on stimulated radiative recombination for GaN-based vertical-cavity-surface-emitting lasers (VCSELs). According to our results, when compared with the VCSEL with AlN/GaN DBR, we find that the VCSEL with AlInN/GaN DBR decreases the polarization-induced electric field in the active region, and this helps to increase the electron–hole radiative recombination. However, we also find that the AlInN/GaN DBR has a reduced reflectivity when compared with the AlN/GaN DBR with the same number of pairs. Furthermore, this paper suggests that more pairs of AlInN/GaN DBR will be set, which helps to even further increase the laser power. Hence, the 3 dB frequency can be increased for the proposed device. In spite of the increased laser power, the smaller thermal conductivity for AlInN than AlN results in the earlier thermal droop in the laser power for the proposed VCSEL.
    Type of Medium: Online Resource
    ISSN: 1559-128X , 2155-3165
    URL: Article
    DOI: 10.1364/AO.492487
    Language: English
    Publisher: Optica Publishing Group
    Publication Date: 2023
    detail.hit.zdb_id: 207387-0
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  • 3
    Online Resource
    Online Resource
    Enhancing the lateral current injection by modulating the doping type in the p-type hole injection layer for InGaN/GaN vertical cavity surface emitting lasers
    Optica Publishing Group ; 2020
    In:  Optics Express Vol. 28, No. 12 ( 2020-06-08), p. 18035-
    Details
    In: Optics Express, Optica Publishing Group, Vol. 28, No. 12 ( 2020-06-08), p. 18035-
    Abstract: In this report, we propose GaN-based vertical cavity surface emitting lasers with a p-GaN/n-GaN/p-GaN (PNP-GaN) structured current spreading layer. The PNP-GaN current spreading layer can generate the energy band barrier in the valence band because of the modulated doping type, which is able to favor the current spreading into the aperture. By using the PNP-GaN current spreading layer, the thickness for the optically absorptive ITO current spreading layer can be reduced to decrease internal loss and then enhance the lasing power. Furthermore, we investigate the impact of the doping concentration, the thickness and the position for the inserted n-GaN layer on the lateral hole confinement capability, the lasing power, and the optimization strategy. Our investigations also report that the optimized PNP-GaN structure will suppress the thermal droop of the lasing power for our proposed VCSELs.
    Type of Medium: Online Resource
    ISSN: 1094-4087
    URL: Article
    DOI: 10.1364/OE.396482
    Language: English
    Publisher: Optica Publishing Group
    Publication Date: 2020
    detail.hit.zdb_id: 1491859-6
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  • 4
    Online Resource
    Online Resource
    Quantum barriers with a polarization self-screening effect for GaN-based VCSELs to increase the electron-hole stimulated recombination and output performance
    Optica Publishing Group ; 2021
    In:  Optical Materials Express Vol. 11, No. 12 ( 2021-12-01), p. 3984-
    Details
    In: Optical Materials Express, Optica Publishing Group, Vol. 11, No. 12 ( 2021-12-01), p. 3984-
    Abstract: Hole injection is one of the fundamental limitations that affect the lasing power for GaN-based vertical-cavity surface-emitting lasers (VCSELs). In this report, a GaN-based VCSEL with a composition gradient quantum barrier (CGQB) structure is proposed and investigated. The designed In x Ga 1-x N quantum barrier has a linear gradient level of InN composition along the [0001] orientation, which is effective in reducing the energy band barrier height for holes. Furthermore, the polarization-induced bulk charges that are generated in the proposed quantum barriers can reduce the electric field magnitude in quantum wells, which is known as the polarization self-screening effect. Therefore, the hole injection and the electron-hole stimulated recombination rate can be both enhanced. We also find that although the hole injection can be enhanced and the polarization induced electric field in the quantum wells can be reduced, an increased gradient level of the InN composition for the polarization self-screened quantum barriers is not always favored. The reduced quantum barrier height will redistribute the energy subbands and make peak gain not coupled with the cavity resonance wavelength, which will decrease the lasing power. Hence, to avoid the substantial variation of the subbands, we suggest that the polarization self-screened active region shall possess properly thick quantum wells for maximizing the lasing power. Moreover, the optimized active region design can increase the 3dB frequency.
    Type of Medium: Online Resource
    ISSN: 2159-3930
    URL: Article
    DOI: 10.1364/OME.442246
    Language: English
    Publisher: Optica Publishing Group
    Publication Date: 2021
    detail.hit.zdb_id: 2619914-2
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  • 5
    Online Resource
    Online Resource
    On the origin for the hole confinement into apertures for GaN-based VCSELs with buried dielectric insulators
    Optica Publishing Group ; 2020
    In:  Optics Express Vol. 28, No. 6 ( 2020-03-16), p. 8668-
    Details
    In: Optics Express, Optica Publishing Group, Vol. 28, No. 6 ( 2020-03-16), p. 8668-
    Abstract: A better lateral current confinement is essentially important for GaN-based vertical-cavity-surface-emitting lasers (VCSELs) to achieve lasing condition. Therefore, a buried insulator aperture is adopted. However, according to our results, we find that the current cannot be effectively laterally confined if the insulator layer is not properly selected, and this is because of the unique feature for GaN-based VCSELs grown on insulating substrates with both p-electrode and n-electrode on the same side. Our results indicate that the origin for the current confinement arises from lateral energy band bending in the p-GaN layer rather than the electrical resistivity for the buried insulator. The lateral energy band in the p-GaN layer can be more flattened by using a buried insulator with a properly larger dielectric constant. Thus, less bias can be consumed by the buried insulator, enabling better lateral current confinement. On the other hand, the bias consumption by the buried insulator is also affected by the insulator thickness, and we propose to properly decrease the insulator layer thickness for reducing the bias consumption therein and achieving better lateral current confinement. The improved lateral current confinement will correspondingly enhance the lasing power. Thanks to the enhanced lateral current confinement, the 3dB frequency will also be increased if proper buried insulators are adopted.
    Type of Medium: Online Resource
    ISSN: 1094-4087
    URL: Article
    DOI: 10.1364/OE.385787
    Language: English
    Publisher: Optica Publishing Group
    Publication Date: 2020
    detail.hit.zdb_id: 1491859-6
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