In:
Optics Letters, Optica Publishing Group, Vol. 45, No. 12 ( 2020-06-15), p. 3340-
Abstract:
Ultra-low-loss waveguide fabrication typically requires high-temperature annealing beyond 1000°C to reduce the hydrogen content in deposited dielectric films. However, realizing the full potential of an ultra-low loss will require the integration of active materials that cannot tolerate high temperature. Uniting ultra-low-loss waveguides with on-chip sources, modulators, and detectors will require a low-temperature, low-loss dielectric to serve as a passivation and spacer layers for complex fabrication processes. We report a 250°C deuterated silicon dioxide film for top cladding in ultra-low-loss waveguides. Using multiple techniques, we measure propagation loss below 12 dB/m for the entire 1200–1650 nm range and top-cladding material absorption below 1 dB/m in the S, C, and L bands.
Type of Medium:
Online Resource
ISSN:
0146-9592
,
1539-4794
Language:
English
Publisher:
Optica Publishing Group
Publication Date:
2020
detail.hit.zdb_id:
243290-0
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