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  • 1
    Online Resource
    Online Resource
    HLA-Matched Allogeneic iPS Cells-Derived RPE Transplantation for Macular Degeneration
    MDPI AG ; 2020
    In:  Journal of Clinical Medicine Vol. 9, No. 7 ( 2020-07-13), p. 2217-
    Details
    In: Journal of Clinical Medicine, MDPI AG, Vol. 9, No. 7 ( 2020-07-13), p. 2217-
    Abstract: Immune attacks are key issues for cell transplantation. To assess the safety and the immune reactions after iPS cells-derived retinal pigment epithelium (iPS-RPE) transplantation, we transplanted HLA homozygote iPS-RPE cells established at an iPS bank in HLA-matched patients with exudative age-related macular degeneration. In addition, local steroids without immunosuppressive medications were administered. We monitored immune rejections by routine ocular examinations as well as by lymphocytes-graft cells immune reaction (LGIR) tests using graft RPE and the patient’s blood cells. In all five of the cases that underwent iPS-RPE transplantation, the presence of graft cells was indicated by clumps or an area of increased pigmentation at 6 months, which became stable with no further abnormal growth in the graft during the 1-year observation period. Adverse events observed included corneal erosion, epiretinal membrane, retinal edema due to epiretinal membrane, elevated intraocular pressure, endophthalmitis, and mild immune rejection in the eye. In the one case exhibiting positive LGIR tests along with a slight fluid recurrence, we administrated local steroid therapy that subsequently resolved the suspected immune attacks. Although the cell delivery strategy must be further optimized, the present results suggest that it is possible to achieve stable survival and safety of iPS-RPE cell transplantation for a year.
    Type of Medium: Online Resource
    ISSN: 2077-0383
    URL: Article
    DOI: 10.3390/jcm9072217
    Language: English
    Publisher: MDPI AG
    Publication Date: 2020
    detail.hit.zdb_id: 2662592-1
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  • 2
    Online Resource
    Online Resource
    An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors
    MDPI AG ; 2018
    In:  Sensors Vol. 18, No. 6 ( 2018-06-04), p. 1813-
    Details
    In: Sensors, MDPI AG, Vol. 18, No. 6 ( 2018-06-04), p. 1813-
    Type of Medium: Online Resource
    ISSN: 1424-8220
    URL: Article
    DOI: 10.3390/s18061813
    Language: English
    Publisher: MDPI AG
    Publication Date: 2018
    detail.hit.zdb_id: 2052857-7
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  • 3
    Online Resource
    Online Resource
    Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C
    MDPI AG ; 2021
    In:  Coatings Vol. 11, No. 4 ( 2021-04-17), p. 470-
    Details
    In: Coatings, MDPI AG, Vol. 11, No. 4 ( 2021-04-17), p. 470-
    Abstract: Ohmic contact with high thermal stability is essential to promote hydrogen-terminated diamond (H-diamond) electronic devices for high-temperature applications. Here, the ohmic contact characteristics of Ni/H-diamond at annealing temperatures up to 900 °C are investigated. The measured current–voltage curves and deduced specific contact resistance (ρC) are used to evaluate the quality of the contact properties. Schottky contacts are formed for the as-received and 300 °C-annealed Ni/H-diamonds. When the annealing temperature is increased to 500 °C, the ohmic contact properties are formed with the ρC of 1.5 × 10−3 Ω·cm2 for the Ni/H-diamond. As the annealing temperature rises to 900 °C, the ρC is determined to be as low as 6.0 × 10−5 Ω·cm2. It is believed that the formation of Ni-related carbides at the Ni/H-diamond interface promotes the decrease in ρC. The Ni metal is extremely promising to be used as the ohmic contact electrode for the H-diamond-based electronic devices at temperature up to 900 °C.
    Type of Medium: Online Resource
    ISSN: 2079-6412
    URL: Article
    DOI: 10.3390/coatings11040470
    Language: English
    Publisher: MDPI AG
    Publication Date: 2021
    detail.hit.zdb_id: 2662314-6
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  • 4
    Online Resource
    Online Resource
    Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates
    MDPI AG ; 2019
    In:  Applied Sciences Vol. 9, No. 14 ( 2019-07-19), p. 2895-
    Details
    In: Applied Sciences, MDPI AG, Vol. 9, No. 14 ( 2019-07-19), p. 2895-
    Abstract: The authors report on a vertical-type visible-blind ultraviolet (UV) Schottky-type photodetector fabricated on a homoepitaxial GaN layer grown on free-standing GaN substrates with a semi-transparent Ni Schottky contact. Owing to the high-quality GaN drift layer with low-density threading dislocation and high electron mobility, the UV photodetector shows a high specific detectivity of more than 1012 Jones and a UV/visible discrimination ratio of ~1530 at −5 V. The photodetector also shows the excellent self-powered photo-response and a high signal-to-noise ratio of more than 104 at zero voltage. It is found that a relatively lower growth rate for the GaN epilayer is preferred to improve the performance of the Schottky-type photodetectors due to the better microstructure and surface properties.
    Type of Medium: Online Resource
    ISSN: 2076-3417
    URL: Article
    DOI: 10.3390/app9142895
    Language: English
    Publisher: MDPI AG
    Publication Date: 2019
    detail.hit.zdb_id: 2704225-X
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  • 5
    Online Resource
    Online Resource
    Fiber Spinning from Cellulose Solutions in Imidazolium Ionic Liquids: Effects of Natural Antioxidants on Molecular Weight, Dope Discoloration, and Yellowing Behavior
    MDPI AG ; 2022
    In:  Fibers Vol. 10, No. 6 ( 2022-06-07), p. 50-
    Details
    In: Fibers, MDPI AG, Vol. 10, No. 6 ( 2022-06-07), p. 50-
    Abstract: Spinning of cellulosic fibers requires the prior dissolution of cellulose. 3-Alkyl-1-methylimidazolium ionic liquids have proven to be suitable solvents for that purpose, but the degradation of cellulose in the spinning dope can be severe. Suitable stabilizers are therefore required that prevent cellulose degradation, but do not adversely affect spinnability or the long-term yellowing behavior of the fibers. A group of twelve renewables-based antioxidants was selected for stabilizing 5% cellulose solutions in the ionic liquids and their effects on cellulose integrity, dope discoloration, and aging behavior were tested by gel permeation chromatography (GPC) and ISO brightness measurements. Propyl gallate (a gallic acid derivative), hydroxytyrosol (from olives), and tocopheramines (a vitamin E derivative) performed best in the three test categories, minimizing both cellulose degradation, chromophore formation in the spinning dope, and yellowing upon accelerating aging of the spun fibers. The use of these stabilizers for cellulose solutions in the imidazolium-based solvent system can therefore be recommended from the point of view of both performance and sustainability.
    Type of Medium: Online Resource
    ISSN: 2079-6439
    URL: Article
    DOI: 10.3390/fib10060050
    Language: English
    Publisher: MDPI AG
    Publication Date: 2022
    detail.hit.zdb_id: 2723193-8
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  • 6
    Online Resource
    Online Resource
    Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates
    MDPI AG ; 2023
    In:  Nanomaterials Vol. 13, No. 7 ( 2023-04-02), p. 1256-
    Details
    In: Nanomaterials, MDPI AG, Vol. 13, No. 7 ( 2023-04-02), p. 1256-
    Abstract: Super-high dielectric constant (k) AlOx/TiOy nanolaminates (ATO NLs) are deposited by an atomic layer deposition technique for application in next-generation electronics. Individual multilayers with uniform thicknesses are formed for the ATO NLs. With an increase in AlOx content in each ATO sublayer, the shape of the Raman spectrum has a tendency to approach that of a single AlOx layer. The effects of ATO NL deposition conditions on the electrical properties of the metal/ATO NL/metal capacitors were investigated. A lower deposition temperature, thicker ATO NL, and lower TiOy content in each ATO sublayer can lead to a lower leakage current and smaller loss tangent at 1 kHz for the capacitors. A higher deposition temperature, larger number of ATO interfaces, and higher TiOy content in each ATO sublayer are important for obtaining higher k values for the ATO NLs. With an increase in resistance in the capacitors, the ATO NLs vary from semiconductors to insulators and their k values have a tendency to decrease. For most of the capacitors, the capacitances reduce with increments in absolute measurement voltage. There are semi-circular shapes for the impedance spectra of the capacitors. By fitting them with the equivalent circuit, it is observed that with the increase in absolute voltage, both parallel resistance and capacitance decrease. The variation in the capacitance is explained well by a novel double-Schottky electrode contact model. The formation of super-high k values for the semiconducting ATO NLs is possibly attributed to the accumulation of charges.
    Type of Medium: Online Resource
    ISSN: 2079-4991
    URL: Article
    DOI: 10.3390/nano13071256
    Language: English
    Publisher: MDPI AG
    Publication Date: 2023
    detail.hit.zdb_id: 2662255-5
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