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  • 1
    Online Resource
    Online Resource
    Electronic Structure of C60/Zinc Phthalocyanine/V2O5 Interfaces Studied Using Photoemission Spectroscopy for Organic Photovoltaic Applications
    MDPI AG ; 2018
    In:  Molecules Vol. 23, No. 2 ( 2018-02-18), p. 449-
    Details
    In: Molecules, MDPI AG, Vol. 23, No. 2 ( 2018-02-18), p. 449-
    Abstract: The interfacial electronic structures of a bilayer of fullerene (C60) and zinc phthalocyanine (ZnPc) grown on vanadium pentoxide (V2O5) thin films deposited using radio frequency sputtering under various conditions were studied using X-ray and ultraviolet photoelectron spectroscopy. The energy difference between the highest occupied molecular orbital (HOMO) level of the ZnPc layer and the lowest unoccupied molecular orbital (LUMO) level of the C60 layer was determined and compared with that grown on an indium tin oxide (ITO) substrate. The energy difference of a heterojunction on all V2O5 was found to be 1.3~1.4 eV, while that on ITO was 1.1 eV. This difference could be due to the higher binding energy of the HOMO of ZnPc on V2O5 than that on ITO regardless of work functions of the substrates. We also determined the complete energy level diagrams of C60/ZnPc on V2O5 and ITO.
    Type of Medium: Online Resource
    ISSN: 1420-3049
    URL: Article
    DOI: 10.3390/molecules23020449
    Language: English
    Publisher: MDPI AG
    Publication Date: 2018
    detail.hit.zdb_id: 2008644-1
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  • 2
    Online Resource
    Online Resource
    Genetic Polymorphisms of Glutathione-Related Enzymes (GSTM1, GSTT1, and GSTP1) and Schizophrenia Risk: A Meta-Analysis
    MDPI AG ; 2015
    In:  International Journal of Molecular Sciences Vol. 16, No. 8 ( 2015-08-19), p. 19602-19611
    Details
    In: International Journal of Molecular Sciences, MDPI AG, Vol. 16, No. 8 ( 2015-08-19), p. 19602-19611
    Abstract: The association between polymorphisms of glutathione-related enzyme (GST) genes and the risk of schizophrenia has been investigated in many published studies. However, their results were inconclusive. Therefore, we performed a meta-analysis to explore the association between the GSTM1, GSTT1, and GSTP1 polymorphisms and the risk of schizophrenia. Twelve case-control studies were included in this meta-analysis. The odds ratio (OR) and 95% confidence interval (95% CI) were used to investigate the strength of the association. Our meta-analysis results revealed that GSTM1, GSTT1, and GSTP1 polymorphisms were not related to risk of schizophrenia (p 〉 0.05 in each model). Further analyses based on ethnicity, GSTM polymorphism showed weak association with schizophrenia in East Asian population (OR = 1.314, 95% CI = 1.025–1.684, p = 0.031). In conclusion, our meta-analysis indicated the GSTM1 polymorphism may be the only genetic risk factor for schizophrenia in East Asian population. However, more meta-analysis with a larger sample size were needed to provide more precise evidence.
    Type of Medium: Online Resource
    ISSN: 1422-0067
    URL: Article
    DOI: 10.3390/ijms160819602
    Language: English
    Publisher: MDPI AG
    Publication Date: 2015
    detail.hit.zdb_id: 2019364-6
    SSG: 12
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  • 3
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    Online Resource
    Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure
    MDPI AG ; 2022
    In:  Nanomaterials Vol. 12, No. 19 ( 2022-10-09), p. 3526-
    Details
    In: Nanomaterials, MDPI AG, Vol. 12, No. 19 ( 2022-10-09), p. 3526-
    Abstract: In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) cell based on a polycrystalline silicon dual-gate metal-oxide-semiconductor field-effect transistor with a fin-shaped structure was optimized and analyzed using technology computer-aided design simulation. The proposed 1T-DRAM demonstrated improved memory characteristics owing to the adoption of the fin-shaped structure on the side of gate 2. This was because the holes generated during the program operation were collected on the side of gate 2, allowing an expansion of the area where the holes were stored using the fin-shaped structure. Therefore, compared with other previously reported 1T-DRAM structures, the fin-shaped structure has a relatively high retention time due to the increased hole storage area. The proposed 1T-DRAM cell exhibited a sensing margin of 2.51 μA/μm and retention time of 598 ms at T = 358 K. The proposed 1T-DRAM has high retention time and chip density, so there is a possibility that it will replace DRAM installed in various applications such as PCs, mobile phones, and servers in the future.
    Type of Medium: Online Resource
    ISSN: 2079-4991
    URL: Article
    DOI: 10.3390/nano12193526
    Language: English
    Publisher: MDPI AG
    Publication Date: 2022
    detail.hit.zdb_id: 2662255-5
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  • 4
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    Online Resource
    Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator
    MDPI AG ; 2022
    In:  Materials Vol. 15, No. 3 ( 2022-01-21), p. 819-
    Details
    In: Materials, MDPI AG, Vol. 15, No. 3 ( 2022-01-21), p. 819-
    Abstract: The self-heating effects (SHEs) on the electrical characteristics of the GaN MOSFETs with a stacked TiO2/Si3N4 dual-layer insulator are investigated by using rigorous TCAD simulations. To accurately analyze them, the GaN MOSFETs with Si3N4 single-layer insulator are conducted to the simulation works together. The stacked TiO2/Si3N4 GaN MOSFET has a maximum on-state current of 743.8 mA/mm, which is the improved value due to the larger oxide capacitance of TiO2/Si3N4 than that of a Si3N4 single-layer insulator. However, the electrical field and current density increased by the stacked TiO2/Si3N4 layers make the device’s temperature higher. That results in the degradation of the device’s performance. We simulated and analyzed the operation mechanisms of the GaN MOSFETs modulated by the SHEs in view of high-power and high-frequency characteristics. The maximum temperature inside the device was increased to 409.89 K by the SHEs. In this case, the stacked TiO2/Si3N4-based GaN MOSFETs had 25%-lower values for both the maximum on-state current and the maximum transconductance compared with the device where SHEs did not occur; Ron increased from 1.41 mΩ·cm2 to 2.56 mΩ·cm2, and the cut-off frequency was reduced by 26% from 5.45 GHz. Although the performance of the stacked TiO2/Si3N4-based GaN MOSFET is degraded by SHEs, it shows superior electrical performance than GaN MOSFETs with Si3N4 single-layer insulator.
    Type of Medium: Online Resource
    ISSN: 1996-1944
    URL: Article
    DOI: 10.3390/ma15030819
    Language: English
    Publisher: MDPI AG
    Publication Date: 2022
    detail.hit.zdb_id: 2487261-1
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  • 5
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    Online Resource
    Influence of Additive N2 on O2 Plasma Ashing Process in Inductively Coupled Plasma
    MDPI AG ; 2022
    In:  Nanomaterials Vol. 12, No. 21 ( 2022-10-27), p. 3798-
    Details
    In: Nanomaterials, MDPI AG, Vol. 12, No. 21 ( 2022-10-27), p. 3798-
    Abstract: One of the cleaning processes in semiconductor fabrication is the ashing process using oxygen plasma, which has been normally used N2 gas as additive gas to increase the ashing rate, and it is known that the ashing rate is strongly related to the concentration of oxygen radicals measured OES. However, by performing a comprehensive experiment of the O2 plasma ashing process in various N2/O2 mixing ratios and RF powers, our investigation revealed that the tendency of the density measured using only OES did not exactly match the ashing rate. This problematic issue can be solved by considering the plasma parameter, such as electron density. This study can suggest a method inferring the exact maximum condition of the ashing rate based on the plasma diagnostics such as OES, Langmuir probe, and cutoff probe, which might be useful for the next-generation plasma process.
    Type of Medium: Online Resource
    ISSN: 2079-4991
    URL: Article
    DOI: 10.3390/nano12213798
    Language: English
    Publisher: MDPI AG
    Publication Date: 2022
    detail.hit.zdb_id: 2662255-5
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  • 6
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    Online Resource
    Improving of the Photovoltaic Characteristics of Dye-Sensitized Solar Cells Using a Photoelectrode with Electrospun Porous TiO2 Nanofibers
    MDPI AG ; 2019
    In:  Nanomaterials Vol. 9, No. 1 ( 2019-01-12), p. 95-
    Details
    In: Nanomaterials, MDPI AG, Vol. 9, No. 1 ( 2019-01-12), p. 95-
    Abstract: Porous TiO2 nanofibers (PTFs) and dense TiO2 nanofibers (DTFs) were prepared using simple electrospinning for application in dye-sensitized solar cells (DSSCs). TiO2 nanoparticles (TNPs) were prepared using a hydrothermal reaction. The as-prepared PTFs and DTFs (with a fiber diameter of around 200 nm) were mixed with TNPs such as TNP-PTF and TNP-DTF nanocomposites used in photoelectrode materials or were coated as light scattering layers on the photoelectrodes to improve the charge transfer ability and light harvesting effect of the DSSCs. The as-prepared TNPs showed a pure anatase phase, while the PTFs and DTFs showed both the anatase and rutile phases. The TNP-PTF composite (TNP:PTF = 9:1 wt.%) exhibited an enhanced short circuit photocurrent density (Jsc) of 14.95 ± 1.03 mA cm−2 and a photoelectric conversion efficiency (PCE, η) of 5.4 ± 0.17% because of the improved charge transport and accessibility for the electrolyte ions. In addition, the TNP/PTF photoelectrode showed excellent light absorption in the visible region because of the mountainous nature of light induced by the PTF light scattering layer. The TNP/PTF photoelectrode showed the highest Jsc (16.96 ± 0.79 mA cm−2), η (5.9 ± 0.13%), and open circuit voltage (Voc, 0.66 ± 0.02 V).
    Type of Medium: Online Resource
    ISSN: 2079-4991
    URL: Article
    DOI: 10.3390/nano9010095
    Language: English
    Publisher: MDPI AG
    Publication Date: 2019
    detail.hit.zdb_id: 2662255-5
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  • 7
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    Development of the Tele-Measurement of Plasma Uniformity via Surface Wave Information (TUSI) Probe for Non-Invasive In-Situ Monitoring of Electron Density Uniformity in Plasma Display Fabrication Process
    MDPI AG ; 2023
    In:  Sensors Vol. 23, No. 5 ( 2023-02-24), p. 2521-
    Details
    In: Sensors, MDPI AG, Vol. 23, No. 5 ( 2023-02-24), p. 2521-
    Abstract: The importance of monitoring the electron density uniformity of plasma has attracted significant attention in material processing, with the goal of improving production yield. This paper presents a non-invasive microwave probe for in-situ monitoring electron density uniformity, called the Tele-measurement of plasma Uniformity via Surface wave Information (TUSI) probe. The TUSI probe consists of eight non-invasive antennae and each antenna estimates electron density above the antenna by measuring the surface wave resonance frequency in a reflection microwave frequency spectrum (S11). The estimated densities provide electron density uniformity. For demonstration, we compared it with the precise microwave probe and results revealed that the TUSI probe can monitor plasma uniformity. Furthermore, we demonstrated the operation of the TUSI probe beneath a quartz or wafer. In conclusion, the demonstration results indicated that the TUSI probe can be used as an instrument for a non-invasive in-situ method for measuring electron density uniformity.
    Type of Medium: Online Resource
    ISSN: 1424-8220
    URL: Article
    DOI: 10.3390/s23052521
    Language: English
    Publisher: MDPI AG
    Publication Date: 2023
    detail.hit.zdb_id: 2052857-7
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  • 8
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    Effects of Vitamin D Supplementation on CD4+ T Cell Subsets and mTOR Signaling Pathway in High-Fat-Diet-Induced Obese Mice
    MDPI AG ; 2021
    In:  Nutrients Vol. 13, No. 3 ( 2021-02-28), p. 796-
    Details
    In: Nutrients, MDPI AG, Vol. 13, No. 3 ( 2021-02-28), p. 796-
    Abstract: Obesity is associated with an impaired balance of CD4+ T cell subsets. Both vitamin D and obesity have been reported to affect the mTOR pathway. In this study, we investigated the effects of vitamin D on CD4+ T cell subsets and the mTOR pathway. Ten-week-old male C57BL/6 mice were divided into four groups and fed diets with different fat (control or high-fat diets: CON or HFD) and vitamin D contents (vitamin D control or supplemented diets: vDC or vDS) for 12 weeks. T cells purified by negative selection were stimulated with anti-CD3/anti-CD28 mAbs and cultured for 48 h. The percentage of CD4+IL-17+ T cells was higher in the vDS than vDC groups. The CD4+CD25+Foxp3+ T cells percentage was higher in HFD than CON groups. The phospho-p70S6K/total-p70S6K ratio was lower in vDS than vDC, but the phospho-AKT/total-AKT ratio was higher in vDS than vDC groups. Hif1α mRNA levels were lower in vDS than vDC groups. These findings suggest HIF1α plays an important role in vitamin-D-mediated regulation of glucose metabolism in T cells, and dietary vitamin D supplementation may contribute to the maintenance of immune homeostasis by regulating the mTOR pathway in T cells.
    Type of Medium: Online Resource
    ISSN: 2072-6643
    URL: Article
    DOI: 10.3390/nu13030796
    Language: English
    Publisher: MDPI AG
    Publication Date: 2021
    detail.hit.zdb_id: 2518386-2
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  • 9
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    Online Resource
    Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET
    MDPI AG ; 2019
    In:  Micromachines Vol. 10, No. 11 ( 2019-10-31), p. 749-
    Details
    In: Micromachines, MDPI AG, Vol. 10, No. 11 ( 2019-10-31), p. 749-
    Abstract: In this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation. In the proposed structure, by locating the gate-metal as a core of the nanowire, a more extensive band-to-band tunneling (BTBT) area can be achieved compared with the conventional core–shell VNWTFETs. The channel thickness (Tch), the gate-metal height (Hg), and the channel height (Hch) were considered as the design parameters for the optimization of device performances. The designed gate-metal-core VNWTFET exhibits outstanding performance, with an on-state current (Ion) of 80.9 μA/μm, off-state current (Ioff) of 1.09 × 10−12 A/μm, threshold voltage (Vt) of 0.21 V, and subthreshold swing (SS) of 42.8 mV/dec. Therefore, the proposed device was demonstrated to be a promising logic device for low-power applications.
    Type of Medium: Online Resource
    ISSN: 2072-666X
    URL: Article
    DOI: 10.3390/mi10110749
    Language: English
    Publisher: MDPI AG
    Publication Date: 2019
    detail.hit.zdb_id: 2620864-7
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  • 10
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    Admission Hyperglycemia as a Predictor of Mortality in Acute Heart Failure: Comparison between the Diabetics and Non-Diabetics
    MDPI AG ; 2020
    In:  Journal of Clinical Medicine Vol. 9, No. 1 ( 2020-01-06), p. 149-
    Details
    In: Journal of Clinical Medicine, MDPI AG, Vol. 9, No. 1 ( 2020-01-06), p. 149-
    Abstract: Background: To investigate the impact of admission hyperglycemia (HGL) on in-hospital death (IHD) and 1-year mortality in acute heart failure (AHF) patients with or without diabetes mellitus (DM). Methods: Among 5625 AHF patients enrolled in a nationwide registry, 5541 patients were divided into four groups based on the presence of admission HGL and diabetes mellitus (DM). Admission HGL was defined as admission glucose level 〉 200 mg/dL. IHD and 1-year mortality were compared. Results: IHD developed in 269 patients (4.9%), and 1-year death developed in 1220 patients (22.2%). DM was a significant predictor of 1-year death (24.8% in DM vs. 20.5% in non-DM, p 〈 0.001), but not for IHD. Interestingly, admission HGL was a significant predictor of both IHD (7.6% vs. 4.2%, p 〈 0.001) and 1-year death (26.2% vs. 21.3%, p = 0.001). Admission HGL was a significant predictor of IHD in both DM and non-DM group, whereas admission HGL was a significant predictor of 1-year death only in non-DM (27.8% vs. 19.9%, p = 0.003), but not in DM group. In multivariate analysis, admission HGL was an independent predictor of 1-year mortality in non-DM patients (HR 1.32, 95% CI 1.03–1.69, p = 0.030). Conclusion: Admission HGL was a significant predictor of IHD and 1-year death in patients with AHF, whereas DM was only a predictor of 1-year death. Admission HGL was an independent predictor of 1-year mortality in non-DM patients with AHF, but not in DM patients. Careful monitoring and intensive medical therapy should be considered in AHF patients with admission HGL, regardless of DM.
    Type of Medium: Online Resource
    ISSN: 2077-0383
    URL: Article
    DOI: 10.3390/jcm9010149
    Language: English
    Publisher: MDPI AG
    Publication Date: 2020
    detail.hit.zdb_id: 2662592-1
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