Keywords:
Compound semiconductors.
;
Electronic books.
Type of Medium:
Online Resource
Pages:
1 online resource (307 pages)
Edition:
1st ed.
ISBN:
9781351858717
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=5092166
DDC:
621.38152
Language:
English
Note:
Cover -- Half Title -- Title -- Copyrights -- Contents -- Preface -- Chapter 1. Basics -- 1.1 What Is a Semiconductor -- 1.2 Naive Band Diagram -- 1.3 Crystal Lattice: Basics -- 1.3.1 Crystal Planes, Miller Indices -- 1.3.2 Reciprocal Lattice -- 1.4 More Details about Band Structure -- 1.4.1 Insert: Very Short Introduction to Quantum Mechanics -- 1.4.2 Schr ¨ odinger Equation and Dispersion Relation -- 1.4.3 Short Summary Up to Now -- 1.5 Effective Mass -- 1.6 Movement of Carriers: Concept of Hole -- 1.7 Real Band Structures -- 1.8 Temperature Dependence of Lattice Constant and Band Gap -- 1.9 Interaction with Light -- 1.10 Carrier Statistics -- 1.10.1 Density of States -- 1.10.2 Fermi Distribution -- 1.11 Defects in Semiconductors -- Chapter 2. Introduction to Compound Semiconductors -- Chapter 3. Bulk Crystal Growth -- 3.1 Czochralski Method -- 3.2 Bridgman Crystal Growth -- 3.3 Wafer Preparation -- Chapter 4. Epitaxial Methods -- 4.1 Liquid Phase Epitaxy (LPE -- 4.1.1 Control of Growth Rate and Layer Thickness -- 4.1.2 LPE Equipment -- 4.2 Vapor Phase Epitaxy (VPE -- 4.3 Metalorganic Vapor Phase Epitaxy -- 4.4 Molecular Beam Epitaxy -- 4.4.1 Equipment Details -- 4.5 Comparison of Epitaxial Methods -- Chapter 5. Electrical Properties of Semiconductors/Electrical Characterization -- 5.1 Carrier Concentration and Doping -- 5.2 Carrier Mobility -- 5.3 Measurement of Electrical Properties -- 5.3.1 Hall Effect -- 5.3.2 C-V Profiling -- 5.4 Secondary Ion Mass Spectrometry -- Chapter 6. Optical Processes in Semiconductors: Optical Spectroscopy -- 6.1 Basic Optical Processes -- 6.2 Steady-State Excitation -- 6.3 Optical Characterization Methods -- 6.3.1 Photoluminescence -- 6.3.2 Absorption -- 6.3.3 Lateral Absorption and Gain Spectroscopy -- 6.3.4 Fourier Spectroscopy -- 6.3.5 Other Related Methods -- 6.4 Some Technical Details.
,
Chapter 7. X-Ray Diffraction -- 7.1 Basics -- 7.2 What Can Be Measured -- 7.3 Diffractometer Equipment -- Chapter 8. Quantum Wells -- 8.1 Semiconductor Heterojunction -- 8.2 QuantumWell: Eigenstates -- 8.3 Density of States -- 8.4 Behavior at k = 0 -- 8.5 High Carrier Mobility in a QuantumWell -- 8.6 Coupling of Several QuantumWells: Resonant Tunneling -- Chapter 9. Strain -- 9.1 Elastic Deformation of a Solid -- 9.2 Influence on Electronic Band Structure -- 9.3 Critical Thickness -- 9.4 Usefulness of Strain -- Chapter 10. Low-Dimensional Systems -- 10.1 Band Structure, etc -- 10.2 Fabrication of Low-Dimensional Structures -- 10.3 Properties of Self-Assembled Dots -- Chapter 11. Group III Nitrides -- 11.1 Basic Properties -- 11.2 Bulk Material, Substrates -- 11.3 Hetero-Epitaxy, Defect Reduction -- 11.4 Doping of GaN -- 11.5 Ternary Alloys -- 11.6 Polarization and Piezoelectricity -- 11.7 Diluted Nitrides -- Chapter 12. Optoelectronic Devices -- 12.1 Light-Emitting Diode -- 12.1.1 Optical Transitions -- 12.1.2 Internal and External Efficiencies -- 12.1.3 Luminous Efficacy -- 12.1.4 LED Colors, White LEDs -- 12.1.5 LED Efficiencies -- 12.2 Semiconductor Laser Diodes -- 12.2.1 Gain -- 12.2.2 Resonator and Feedback -- 12.2.3 Electrical Pumping -- 12.2.4 OpticalWaveguide and Confinement -- 12.2.5 Temperature Behavior -- 12.2.6 Lateral Confinement -- 12.2.7 Near Field, Far Field -- 12.2.8 Distributed Feedback Lasers -- 12.2.9 Vertical-Cavity Surface-Emitting Laser -- 12.3 Solar Cells -- 12.3.1 BasicWorking Principle -- 12.3.2 Solar Spectrum -- 12.3.3 Compound Semiconductors and Photovoltaics -- 12.3.4 Multi-Junction Solar Cell -- 12.3.5 Concentrator Cells -- 12.3.6 PV Systems with Highest Efficiency -- Chapter 13. Electronic Devices -- 13.1 Field-Effect Transistor -- 13.2 Heterobipolar Transistor -- References -- Index.
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