In:
Journal of Applied Crystallography, International Union of Crystallography (IUCr), Vol. 32, No. 5 ( 1999-10-01), p. 859-863
Abstract:
Localized destructive interference can be obtained for specific values of the angle of incidence when studying semiconductor superlattices with X-ray reflectivity at fixed wavelength. Kinematical calculations show that the difference between the real parts of the refractive index of the layers must be small, and that the number of superlattice periods must be optimized to enhance the destructive interference. An experimental example, involving a CdTe/CdZnTe superlattice, and optical matrix simulations for SiGe/Si superlattices are presented to illustrate this effect. Finally, it is shown that such structures can be tailored to act as energy filters at fixed angles of incidence.
Type of Medium:
Online Resource
ISSN:
0021-8898
DOI:
10.1107/S0021889899006238
Language:
Unknown
Publisher:
International Union of Crystallography (IUCr)
Publication Date:
1999
detail.hit.zdb_id:
2020879-0
Permalink