Publication Date:
2015-03-21
Description:
Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or100 μ m . The sensors were fabricated as either n-on-n or n-on-p type devices. Using15 ke...
Electronic ISSN:
1748-0221
Topics:
Physics
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