In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 4R ( 2010-04-01), p. 041103-
Abstract:
Phosphorus-doped ZnO thin films were fabricated by pulsed laser deposition (PLD) with different phosphorus pentoxide (P 2 O 5 ) concentrations. The as-deposited films were annealed in nitrogen gas at 800 °C for 5 min. Hall effect measurement showed that all the as-deposited films were n-type semiconductors, and confirmed that after annealing treatment, a particular sample could be transformed from an n-type semiconductor into a p-type one. On the basis of the results of X-ray diffraction analysis and X-ray photoelectron spectroscopy, the mechanism of such transformation was discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.041103
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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