In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 6L ( 2005-06-01), p. L869-
Abstract:
We investigated the etching behaviors of GST, which has been mainly employed for the realization of phase-change type nonvolatile memory devices, using high-density helicon plasma etching system under the various etching gas conditions. Our results provide the etch rates of GST thin films as a function of gas mixing ratio when the gas mixtures of Ar/Cl 2 and Ar/CHF 3 were applied. It was found that the etch selectivities of GST to SiO 2 and to TiN were optimized at Ar/Cl 2 = 90/10 and Ar/CHF 3 = 80/20, respectively. It was also confirmed that there is no significant change in composition of GST after the etching process. Using the obtained results, we can design the etching process in a systematic way for the fabrication of GST-loaded phase-change type memory devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.L869
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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