In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 6R ( 2011-06-01), p. 061401-
Abstract:
We propose two types of six-step photomask, complementary metal–oxide–semiconductor (CMOS), thin-film transistor (TFT) PCT device structures in order to simplify their fabrication process compared with that of conventional, low-temperature, polycrystalline silicon (LTPS) CMOS TFT devices. The initial charge transfer characteristics of both types of six-step PCT are equivalent to those of the conventional nine-step PCT. Both types of six-step PCT are comparable to the conventional nine-step mask lightly doped drain (LDD) device in terms of the dc device lifetime of over 10 years at V ds =5 V for line inversion driving, which is the normally recognized duration time for semiconducting devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.061401
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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