In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 8R ( 2001-08-01), p. 4845-
Abstract:
The methods of preparing organic monolayers on Si(111), the effects of electron-beam irradiation onto these monolayers, and the deposition of metal atoms over the irradiated areas have been investigated in order to develop a process of mass-scale production of nanometer-scale patterns on Si(111) wafer surfaces. The organic monolayers were fabricated on hydrogen-terminated Si(111) wafer surfaces using previously reported methods for the electrolysis of para -substituted benzenediazonium salts and the Grignard reaction with various alkyl moieties and reaction procedures. Using these electrolysis methods, partially well-defined two-dimensional monolayers were formed, which were, however, obscured by precipitated by-products. The Grignard reaction deposited homogeneous monolayer moieties of alkyl groups which were randomly arranged and are suitable for surface passivation. Electron-beam bombardment of the organic monolayers on Si(111) was performed in an atmosphere of O 2 or H 2 O. The bombarded area was effectively oxidized in a well-controlled manner. By immersing the bombarded specimen into an aqueous NiSO 4 +(NH 4 ) 2 SO 4 solution, Ni was selectively impregnated only within the area of electron bombardment. Based on these results, application of organic monolayers for fabricating nanometer-scale monolayer patterns is proposed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.4845
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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