In:
Journal of Physics: Conference Series, IOP Publishing, Vol. 2370, No. 1 ( 2022-11-01), p. 012014-
Abstract:
The effect of gamma irradiation on GaN lateral Schottky barrier diodes (SBDs) has been investigated. Six gamma irradiation conditions were carried out, namely 100/500 k rad, 1 M rad, 100/500 k rad and 100°C, and 1 M rad and 100°C. All the irradiated devices have a similar parameter variation tendency. There is no change for turn-on voltage. The on-state resistance is reduced from 5.32~5.53 Ω to 5.10~5.26 Ω, while the reverse leakage at -100 V is increased from 3.53~4.99 μA to 4.13~5.79 μA. The interface information extracted is improved slightly, demonstrating the anode/GaN interface is improved, and the passivation/AlGaN interface may be degraded. The slight variation of irradiated performance demonstrates that the GaN lateral SBDs are hardly affected by gamma irradiation.
Type of Medium:
Online Resource
ISSN:
1742-6588
,
1742-6596
DOI:
10.1088/1742-6596/2370/1/012014
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
2166409-2
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