In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 4S ( 2005-04-01), p. 2142-
Abstract:
In this paper, 1%-nitrogen doped nickel was proposed to improve the thermal stability of Ni-silicide for nano-scale N-type Metal Oxide Semiconductor Field Effect Transistor. It is shown that thermal stability of nickel silicide is improved a lot by the Nitrogen incorporation in NiSi layer using the 1%-nitrogen doped nickel target. Even after post-silicidation annealing at 650°C for 30 min, the low resistivity NiSi with low junction leakage current can be achieved. Moreover, improved device characteristics such as threshold voltage, transconductance, and on-off current, subthreshold slope were obtained in 80 nm NMOSFET.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.2142
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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