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  • IOP Publishing  (2)
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  • IOP Publishing  (2)
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  • 1
    Online Resource
    Online Resource
    Microwave Plasma CVD System for the Fabrication of Thin Solid Films
    IOP Publishing ; 1982
    In:  Japanese Journal of Applied Physics Vol. 21, No. 8A ( 1982-08-01), p. L470-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 21, No. 8A ( 1982-08-01), p. L470-
    Abstract: This study was concerned with the development of a process for the deposition of thin-films from a microwave plasma of semiconductor materials. A coaxial line type microwave CW discharge was used to create uniform plasmas and a-Si films were fabricated from Ar gas containing 10% SiH 4 . The X-ray diffraction patterns shown that the fabricated films, where the microwave power is large, are crystallized and the structure of the other films is amorphous.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.21.L470
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1982
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Microwave Plasma CVD System to Fabricate α-Si Thin Films out of Plasma
    IOP Publishing ; 1983
    In:  Japanese Journal of Applied Physics Vol. 22, No. 1A ( 1983-01-01), p. L40-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 22, No. 1A ( 1983-01-01), p. L40-
    Abstract: This study has been concerned with the development of a system to fabricate thin films by a microwave plasma chemical vapour deposition method while keeping the substrate out of the discharge plasma. Si thin films are fabricated in a deposition region using an improved coaxial line type microwave CW discharge tube without a silicon deposition on the discharge tube wall. A very uniform Si thin film has been fabricated over a circle with a 10 cm diameter and the deposition rates are 50 to 400 Å/min. The structure of the fabricated films is amorphous and the optical band gap is 1.8 to 2.0 eV.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.22.L40
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1983
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
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