In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 27, No. 1R ( 1988-01-01), p. 30-
Kurzfassung:
The influence of deposition conditions on the hydrogen concentration and bond configurations in silicon nitride (SiN) films prepared by the electron cyclotron resonance plasma CVD(ECR P-CVD) method has been studied in comparison with those prepared by a conventional plasma CVD(P-CVD) method, by means of secondary ion mass spectrometry (SIMS), infrared absorption (IR) spectra and electron spin resonance (ESR).
SiN films deposited at low microwave powers and a relatively high SiH 4 flow rate had higher H concentrations than those deposited at high microwave powers.
The hydrogen concentration was found to be in the range from 1.3×10 22 -5×10 21 /cm 3 (13.8-4.7%) at microwave powers between 50 and 500 W.
The bond configurations in the films are markedly dependent upon the deposition conditions. SiN films with only N-H bonds are thermally stable, even after annealing at 900°C in a dry N 2 atmosphere, while almost all the H atoms are lost after annealing for films with both N-N and Si-H bonds.
Annealing studies by ESR measurements revealed that the H concentration in the films has little influence on the spin density.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1988
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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