In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 4R ( 2005-04-01), p. 2074-
Abstract:
We investigated the growth process of carbon nanowalls (CNWs) on a SiO 2 substrate by microwave plasma-enhanced chemical vapor deposition (MPECVD). It is revealed that the CNWs are grown at the fine-textured structure on the SiO 2 and the growth process does not require the catalyst. The CNW initially has a semicircular shape. The height, thickness, and mesh size increase with growth time. It is found that the height of CNWs as a function of time obeys the square root law. Extremely high growth rate, approximately 10 µm/h, is achieved, in contrast to previous studies.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.2074
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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