In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 2R ( 1997-02-01), p. 595-
Abstract:
We prepared TiN films by metallic or nitride mode sputtering using a collimator, and investigated the characteristics of the films. Resistivity, density, thermal stress, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) measurements and transmission electron microscope (TEM) observation were carried out. The characteristics of the TiN films depended on the N 2 /Ar flow ratio. TiN deposition rates in the metallic mode with N 2 /Ar flow ratios from 0.2 to 0.5 were 3 times higher than those in the conventional nitride mode with N 2 /Ar ratios from 0.75 to 1.0. By depositing the film under the best metallic mode conditions with N 2 /Ar=0.5, the TiN film with a minimum resistivity and a maximum film density was formed. The TiN films, which were prepared under optimized conditions of metallic mode deposition, had a small concentration of oxide in the TiN, strong (111)-preferred orientation and good crystallinity.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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