In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 4S ( 1999-04-01), p. 2598-
Abstract:
Superlattice quasi-quaternaries (SL-QQs), consisting of MgSe/ZnSeTe short-period
superlattices, were grown on InP substrates by molecular beam epitaxy with nitrogen p-doping. By changing the Mg composition (i.e., the layer thickness ratio of MgSe in the superlattice) from 0 to 0.76, the photoluminescence peak energy at 15 K increased from 2.11
to 2.68 eV. The N-doping of MgSe/ZnSeTe SL-QQs was performed by two processes, that is by the modulation-doping into ZnSeTe and by the all-doping. For the modulation-doping,
a hole concentration of over 1×10 18 cm -3 was obtained for Mg composition of less than
0.14, with decreased monotonically with increasing Mg composition. The hole concentration increased by changing the doping process from the modulation-doping to the
all-doping. For example, the hole concentration increased from 1×10 15 to 3×10 17 cm -3 for
Mg composition of 0.4. ZnCdSe/MgZnCdSe(Te) light emitting diodes (LEDs) were fabricated using MgSe/ZnSeTe SL-QQs as p-cladding layers having yellow emissions
around 577 nm at 77 K.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.2598
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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