In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 21, No. S1 ( 1982-01-01), p. 73-
Abstract:
Soft Error Rate Analysis Model (SERAM) for dynamic NMOS RAMs is developed. SERAM simulates the three-dimensional diffusion and collection processes of alpha-particle induced carriers for various incidences. To verify SERAM, the frequency of collected charge in one memory cell and soft error rates of 64 K-bit samples were measured. The simulations were in good agreement with the experiments. Memory cell scaling analysis by SERAM shows that if the cell area scales as (1/ K ) 2 , the ratio Q c / Q α decreases as (1/ K ) β , where K 〉 1, β∼0.4 for unsealed voltages, and Q c and Q α are the critical charge and the noise charge, respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAPS.21S1.73
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1982
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink