In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 4S ( 2004-04-01), p. 2250-
Abstract:
We have demonstrated the low- V BE operation of SiGeC heterojunction bipolar transistors by introducing a novel device design concept using the SiGe cap structure and high Ge- (up to 25%) and C- (up to 0.8%) content base. We successfully controlled the base current by designing the SiGe cap structure and C content, which enabled us to obtain suitable values of h FE and B V CEO , while maintaining a high collector current and high-frequency performance. We clarified that the recombination around the emitter-base junction is enhanced by introducing the SiGe cap structure and high C content, which contribute to the increase of the base current.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.2250
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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