In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 2B ( 2000-02-01), p. L156-
Abstract:
The effect of fluorine implantation on reverse leakage current
has been investigated in n + /p junctions formed by diffusion from a
cobalt silicide layer. Fluorine (F) implantation at a moderate dose and energy improves the junction leakage, but high dose fluorine
implantation, above 1×10 15 cm -2 , degrades junction
leakage. Considering that F implantation does not affect the thermal stability of the CoSi 2 layer and arsenic concentration
profiles, it is conjectured that the highly electronegative and reactive F ions cause deactivation of silicon lattice defects that
act as generation centers, thereby reducing leakage. However, F ions in excess may act as defects themselves in silicon rather than
reducing the silicon lattice defects, which increases the leakage current.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.L156
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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