In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 2R ( 2012-02-01), p. 025702-
Abstract:
We have fabricated pentacene thin-film transistors (TFTs) with modified Al 2 O 3 layers as gate dielectrics. The effects of thermal treatments on the E-beam-processed Al 2 O 3 layers in the TFTs were investigated by using various analytical tools such as X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscope (AFM), and a contact angle method. From the results of the analyses, it was confirmed that the performance of thermally treated Al 2 O 3 gate dielectrics is much better than that of non-treated ones. Finally, pentacene TFTs were fabricated with optimum conditions and improved electrical properties were obtained for low-voltage (below -3 V) TFTs as follows: a mobility of 0.9 cm 2 V -1 s -1 , a threshold voltage of -1.3 V, a sub-threshold slope of 0.12 V/decade, and an on/off current ratio of 2.2 ×10 5 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.025702
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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