In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 12S ( 1998-12-01), p. 6877-
Abstract:
The refractive indices of photoresist are usually measured by
an ellipsometer or spectrophotometer, but the values are limited to pre-exposure. It is known that the real and imaginary indices are changed during the exposure.
But there is little report on these variations since it is difficult to measure this refractive index change at deep ultraviolet. The Dill A B C parameters show a significant variation with the resist and substrate thickness
as well as the experimental conditions. A method is suggested to extract the parameters from the refractive index changes.
We can get the refractive index change and extract the Dill A B C exposure parameters from that.
The multiple thin film interference calculation is used to fit the measured transmittance data. The results of our experiments and calculations for several resists including
193 nm chemically amplified resists are compared with other methods. The results are agreed well with the full multilayer thin film simulation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.6877
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
Permalink